LED Tungsten Copper Heat Base and Other Materials Comparison

Most of LED products, usually you need more than one LED assembled on a circuit board. The circuit board not only needs to carry LED module structure, but also plays an important role in heat dissipation. LED heat dissipation board consists of two major components, one is the system board, and the other is LED grain substrate. Most of the system board is made of metal, which takes advantages of excellent heat dissipation characteristics of its own to achieve the effect. However, with the increasing brightness and efficacy requirements of LED, the bottleneck will appear on the LED grain substrate. In order to break the bottleneck of heat dissipation, researchers around the world look for and develop the substrate materials with high thermal coefficient. Currently, several common LED heat dissipation substrates comprises rigid printed circuit boards, high thermal conductivity aluminum plate, a ceramic substrate, soft printed circuit boards, metal composite materials.

Tungsten copper board for heat dissipation is currently recognized as the most performance fit a class of materials. It has many advantages, such as high strength, low coefficient of thermal expansion, high heat transfer coefficient and so on. By adjusting the component can make up a single hot metal chips and LED mismatch insufficient, so it has been widely used in some large scale integrated circuits, high-power devices, as the radiating element. In addition, electrolytic polishing tungsten copper foil surface finishing can effectively improve the heat dissipation of tungsten copper LED substrate surface flatness to meet the stringent requirements for heat dissipation board of flatness. Thick film ceramic substrate fabricated by screen printing technology and with a spatula printed material on the substrate, after drying, sintering, laser and other processes. But with the decreasing size and lines of LED, higher requirements for precision, the accuracy of such board has been unable to reach. Low-temperature co-sintered multi-layer ceramic substrate printed on the board by screen printing and then integrating the multilayer ceramic substrate, and finally through the low-temperature sintering. But it is supposed to consider the shrinkage ratio after multi-layer ceramic sintering, which is difficult to be controlled.

tungsten copper board for heat dissipation

 

LED Tungsten Copper Heat Base

With the world's attention of environmental awareness, energy saving has been an irresistible trend of the moment. The LED industry is one of the fastest growing industries; LED products not only have a great advantage in terms of energy saving, but also have high efficiency, fast response time, long life cycle and do not contain toxic substances, which is outstanding in similar products. In general, the input power of LED high power products has about 15% of electrical energy into light energy, and another 85% of the electrical energy is dissipated into heat. So if the LED light emitting heat generated not been able to export, it will make the temperature of the LED screen is too high, thus affecting its luminous efficiency, stability and product life cycle. In order to improve the luminous efficiency, thermal dispersion management and design LED system become an important research topic.

The ways of heat dissipation mainly includes: air heat dissipation, heat the substrate to export, export gold wire cooling, through-hole heat dissipation and so on. Here we introduce the substrate cooling. In LED products typically requires multiple LED assembled on a circuit board. In addition to the circuit board is responsible for carrying LED module structure, on the other hand it also needs to play the role in heat dissipation. LED heat dissipation substrate mainly takes advantages of the excellent heat conductivity of its thermal substrate material to derived from the LED grain. Thus according to the ways of LED heat dissipation, can be divided into two types, LED grain board and the system circuit board. These two are multiplied by different heat dissipation board carrying the LED chip LED grain and the LED grain emits light generated by the circuit board to the system, and then absorbed by the atmosphere via the heat dissipating board LED die, to achieve the dissipation of the heat effect. Tungsten copper material has high strength, low coefficient of thermal expansion, excellent plasticity and thermal and electrical conductivity, which is the perfect choice for LED board. Compared with single metal, such as Al substance, it can avoid the thermal mismatch and have better stability and heat dissipation.

tungsten copper board for heat dissipation

 

Tungsten Heater for Vacuum Aluminizing - Mirror Industry

Mirror is one of the daily commodities. Development of the mirror has experienced three stages: copper, mercury and silver, and with the development of science and technology, vacuum aluminizing has been widely used in mirror industry. Although the history of silver mirror is long and the manufacturing process is more maturity. However, its manufacturing process requires a lot of silver, so it has a great damage for environmental. In addition, the stability of the quality of the product is not enough. Especially in summer, mirror is easy to be damp and silver layer is easy to metamorphose. Therefore, when aluminum mirror was launched, it is popular with the majority of manufacturers. This mirror is made by a new manufacturing process of vacuum aluminizing which evaporate an aluminum film to glass by tungsten heater in vacuum. Two kinds of mirror looks the same, but the mirror of aluminum mirror is blue, the light is soft, silver mirror is white.

Mirror made by vacuum aluminizing has the following excellent features: on the one hand, it is using a vacuum physical vapor deposition, chemical adsorption-based, aluminum film can be well combined with glass, which has a good adhesion. Therefore, the wear resistance of aluminum mirror is strong with long life time. On the other hand, gas molecules of aluminum deposited in vacuum is meticulous, so that the film coated on the glass surface is more uniform with less trachoma, which can improve the corrosion resistance of aluminum mirror, it can be placed in the kitchen and bathroom.

Another point is that vapor deposition of aluminum is from ultraviolet to infrared, because the infrared have relatively high and flat spectral reflectance, reflectance of aluminum mirror in the visible light field can reach more than 90%, which has a higher reflectivity rate and it can reflect image clearly.

However, alkaline resistance of aluminum mirror is poor, which cannot be wiped with a cloth with alkali.

tungsten heater and Al mirror

Gradient Tungsten Carbide Coated Inserts

Although tungsten carbide has uniform composition and distribution and compared with other materials has many advantages, there is an inevitable contradiction that the balance between hardness and toughness. It also has been an important factor in limiting conventional carbide materials applications. Preparation and use of new technology, the traditional carbide materials exhibit gradient in the structure, can effectively reconcile the internal contradictions of this group. Gradient tungsten carbide coated inserts achieve better performance by gradient distribution, especially has a great advantage in high-performance carbide cutting tools.

After gradient treatment, alloy formation region lack toughness cubic nitrides and carbonitrides in the surface region, the corresponding binder content is higher than the nominal content of the matrix binder. On this basis, using the CVD method or PVD coating deposited on a cemented carbide substrate to get coated gradient cemented carbide. When the coating is formed the crack extended to the toughness of the gradient region, because of its good ductility and toughness, it can effectively absorb energy during crack propagation, thus effectively preventing the internal crack propagation and to improve the performance of carbide cutting tools.

The experiment shows that with the increasing content of Co, the strength, magnetic saturation has been improved, the hardness, magnetism, density of gradient carbide decreased, and the alloy composition gradient structure more obvious, gradient layer is also thicker; while with the increase of the alloy Ti (CN) content, hardness gradient alloy structure, the magnetic force is increased, reducing the strength and density occurs, reducing the thickness of the alloy graded layer; in the substrate and coating composition of the same situation, coated carbide blade cutting gradient structure without gradient structure coated carbide cutting inserts more excellent (at the same height wear conditions, cutting tool life increased nearly doubled). In addition, higher Co content gradient coated carbide cutting inserts generally better than a low Co content gradient coating blade cutting performance.

gradient tungsten carbide coated inserts

 

Sputter Targets Prepared by Tungsten Powder

To achieve the high-density tungsten sputter target, a tungsten powder is provided having a powder size smaller than about 50 μm. To obtain a high-purity tungsten sputter target, the tungsten powder is further provided with an oxygen content less than about 500 ppm. In a preferred embodiment of the present invention, the tungsten powder is provided with a powder size smaller than about 20 μm, and more preferably smaller than about 10 μm, and an oxygen content less than about 300 ppm. This tungsten powder is then hot-isostatic-pressed at a temperature in the range of 1200° C. to 1600° C. at a pressure higher than about 15 ksi for a period of at least 3 hours in an inert environment such as argon. The temperature of the hot-isostatic-press (HIP) is preferably about 1400° C. with a pressure of about 40 ksi. At these preferred temperature and pressures, the hot-isostatic-pressing (HIPing) step is preferably performed for about 7 hours.
 
The HIPing method requires the use of a capsule for containing the powder material during pressing. The capsule material must be capable of substantial deformation because the HIPing method uses high pressure to achieve about a 50-70% volume reduction. Furthermore, the capsule material must have a melting point higher than the HIPing temperature. Thus, any material of sufficiently high melting point that can withstand the degree of deformation caused by the HIPing process is suitable for the present invention. Suitable materials may include, for example, beryllium, cobalt, copper, iron, molybdenum, nickel, titanium or steel.
 
A cold-isostatic-pressing step prior to the HIPing step is recommended for target diameter/height ratios of greater than about 3. This consolidated powder can then be machined using known techniques, such as electro-discharge machining, water-jet cutting or a regular mechanical lathe. Once machined, the consolidated target blank can be bonded to a backing plate using known methods, such as soldering with a lead-tin or indium/tin solder.
 
The sputter targets fabricated by this process have a density higher than 97% of theoretical density, and normally, a 99% density can be achieved through the use of the smaller particle size starting powder. Thus, the combination of the HIPing process with a small particle size starting powder produces a highly dense tungsten sputter target. This high-density reduces particle generation from the targets during sputtering.
 
High-purity sputter targets may also be produced by using a starting powder of high purity. For example, a starting powder having a metallic purity higher than about 99.999% consolidated by HIPing can produce a sputter target having a metallic purity of at least about 99.9995.
 
The oxygen level of the targets produced by the present invention is at least about 100 parts per million less than the starting powder. This can further be achieved by using a powder capsule made of such materials as titanium, iron or alloys thereof. It is believed that because oxygen in the powder material, such as in the form of WO2, is not stable at the high temperatures used in the HIPing process, the capsule material will react with the oxygen. Thus, it is believed that these powder capsules can act as an oxygen absorber to reduce the oxygen level of the tungsten by more than 100 ppm. The lower oxygen content in the sputter targets of the present invention results in a decrease in the resistivity in conducting films. Thus, any material that reacts with unstable oxygen and meets the melting point and deformation requirements discussed above is a suitable material for use in the present invention. Morever, less alkaline contaminations are picked up during the consolidation process of the present invention by the elimination of graphite molds. The powder capsules of the present invention, such as Ti or Fe capsules, contain very low alkaline content, which will not escape or evaporate from the capsule during HIPing. Reducing alkaline elements in the films reduces leakage of the gate insulation in the integrated circuit, which results in improved reliability of the devices. Furthermore, the hot-isostatic-pressing used in the method of the present invention uses lower temperatures and higher pressure than previous methods, which avoids grain growth of the target material. Fine grains in a sputtering target will improve the uniformity of the deposited film.
 
tungsten sputter targets

Tungsten Powder and Sputter Targets

A method is provided for fabricating tungsten sputter targets having a density of at least about 97% of theoretical density and an oxygen content of at least about 100 ppm less than the starting powder. According to the principles of the present invention, a tungsten powder having a powder size less than about 50 μm and an oxygen content less than about 500 ppm is hot-isostatic pressed at a temperature of about 1200° C. to about 1600° C. and a pressure of at least about 15 ksi for at least about 3 hours. A high-purity sputter target is further achieved by using a tungsten starting powder having a purity higher than about 99.999%.
 
In the manufacture of sputter targets used in the semi-conductor industry, and more particularly to sputter targets used in physical vapor deposition (PVD) of thin films onto complex integrated circuits, it is desirable to produce a sputter target that will provide film uniformity, minimal particle generation during sputtering, and desired electrical properties. Furthermore, to meet the reliability requirements for diffusion barriers or plugs of complex integrated circuits, the sputter target must have high-purity and high-density.
 
Current methods to achieve suitable sputter targets for use in complex integrated circuits involve either hot-pressing or cold-isostatic-pressing followed by high temperature sintering. Using either of these techniques, the density of the pressed target material is about 90% of theoretical density. To obtain that 90% density, the sintering process needs to proceed at a minimum of 1800° C. This high temperature results in a significant growth of the grains. Large grain size in sputter targets is deleterious to the uniformity of the deposited films. Furthermore, the sputter targets fabricated by these methods have a high oxygen content, which results in a high film electric resistivity. In addition, these processes typically involve pressing in a graphite die mold. Some volatile contaminations are contributed to the targets by this graphite mold, which results in an increase in the impurities in the films and deteriorates the reliability of the sputter devices. For example, graphite has a high alkaline element which evaporates out of the mold and is absorbed by the sputter target during pressing and sintering. Thus, the sputter targets fabricated by the hot-press or cold-isostatic-press followed by high temperature sintering have proved unreliable for use in complex integrated circuits.
 
There is thus a need to develop a method for fabricating high-purity, high-density tungsten sputtering targets that will meet the reliability requirements for complex integrated circuits.
 
The present invention provides a tungsten sputter target having a density of at least about 97% of theoretical density and an oxygen content of at least about 100 ppm less than the starting powder. Furthermore, this high-density, low oxygen sputter target may be produced with a metallic purity of at least about 99.9995. This high-density, high-purity tungsten sputter target is fabricated by (a) providing a tungsten powder having a purity higher than about 99.999%, a powder size smaller than about 50 μm and preferably smaller than about 20 μm, and an oxygen content less than about 500 ppm; and (b) hot-isostatic-pressing the powder at a temperature between about 1200° C. to about 1600° C. at a pressure of at least about 15 ksi for at least about 3 hours. In a preferred embodiment of the invention, the tungsten powder has a purity of at least 99.9995%, a powder size of less than about 10 μm, and an oxygen content less than about 300 ppm.
 
In a further preferred embodiment of the present invention, hot-isostatic-pressing is performed at a temperature of about 1400° C. and a pressure of about 40 ksi for about 7 hours. Where a desired target diameter to height ratio is greater than about 3, the method of fabricating the sputter target preferably includes the additional step of cold-isostatic pressing the powder prior to hot-isostatic-pressing.
 
In a preferred embodiment of the invention, the powder is pressed in a powder capsule made of either titanium, iron, or an alloy thereof, to reduce the oxygen level of the tungsten.
 
According to the principles of the present invention, a tungsten sputter target is fabricated having an oxygen content of at least about 100 ppm less than the starting powder and a density higher than 97% of theoretical density. By starting with a high purity powder, such as 99.999% purity or higher tungsten powder, a high-purity sputter target may also be achieved. This high-purity, high-density tungsten sputter target can be used in the physical vapor deposition of thin films as diffusion barriers or plugs in complex integrated circuits.
 
tungsten sputter targets

Life Time of Tungsten Heater of Kinescope Evaporation - Heat Treatment

In the process of kinescope evaporation, surface of wire would change and produce crystalline structure because of temperature, it would greatly shorten the life of the heater when the crystal structure increase to a certain number. Therefore, manufacturers should pay attention to control the number of crystal structure of wire surface in the deposition process. In addition, the more the amount of aluminum insertion, the shorter the tungsten heater life time, so the amount of aluminum insertion should not exceed the amount of theory evaporation.

In addition to these two reasons, the fluidity of aluminum has a great impact on the life time of tungsten heater in vapor deposition process. The fluidity of aluminum tungsten is measured by the amount of coil wetted on wolfram twisted spiral surface. The greater the number of spiral turns soaked, the better the fluidity of aluminum. If the Al liquidity is better, aluminum on the surface of the screw would be less after each deposition, the chance of reaction with tungsten would be less, which can prolong life time of tungsten heater. On the contrast, if the liquid of aluminum is poor, then residual aluminum would be deposited on tungsten surface for a long-term after each deposition. Thereby shortening the life time of the heater element.

The heat treatment temperature has a great impact on the life time of heater element. In order to increase its service life, tungsten heater would be placed in the furnace, keep warm for 10 minutes under the conditions of 1400 ℃, and then do heat treatment. When the heat treatment temperature is higher than 1450 ℃, the wire would completely recrystallized, so the spiral would become very brittle, it would break once it is to be touched and cannot be used again. If the heat treatment temperature is lower than 1350 ℃, then it cannot eliminate interior stress generated in the process of wire deformation, which would also reduce its life time. Therefore, control heat treatment temperature is essential for life time of wolfram heater.

显像管和钨加热子

 

Tungsten Powder and Electrolytic Capacitor

A tungsten powder which has tungsten silicide (such as W5Si3) on the surfaces of particles and has a silicon content of 0.05-7% by mass; a positive electrode body for capacitors; an electrolytic capacitor; a method for producing a tungsten powder; and a method for producing a positive electrode body for capacitors. The tungsten powder has an average primary particle diameter of 0.1-1 μm, and tungsten silicide is localized within 50 nm from the surface of each particle. The tungsten powder contains at least one of tungsten nitride, tungsten carbide and tungsten boride in a part of the surface of each particle. It is preferable for the tungsten powder that the content of phosphorus element is 1-500 ppm by mass, the oxygen content is 0.05-8% by mass, and the content of elements other than tungsten, silicon, nitrogen, carbon, boron, oxygen and phosphorus is 0.1% by mass or less. It is also preferable that the tungsten granulated powder has an average particle diameter of 50-200 μm and a specific surface area of 0.2-20 m2/g. According to the present invention, a tungsten capacitor which has good leakage current (LC) performance can be provided.The present invention relates to: a tungsten powder which has tungsten silicide (such as W5Si3) on the surfaces of particles and has a silicon content of 0.05-7% by mass; a positive electrode body for capacitors; an electrolytic capacitor; a method for producing a tungsten powder; and a method for producing a positive electrode body for capacitors. The tungsten powder has an average primary particle diameter of 0.1-1 μm, and tungsten silicide is localized within 50 nm from the surface of each particle. The tungsten powder contains at least one of tungsten nitride, tungsten carbide and tungsten boride in a part of the surface of each particle. It is preferable for the tungsten powder that the content of phosphorus element is 1-500 ppm by mass, the oxygen content is 0.05-8% by mass, and the content of elements other than tungsten, silicon, nitrogen, carbon, boron, oxygen and phosphorus is 0.1% by mass or less. It is also preferable that the tungsten granulated powder has an average particle diameter of 50-200 μm and a specific surface area of 0.2-20 m2/g. According to the present invention, a tungsten capacitor which has good leakage current (LC) performance can be provided.
 
Electrolytic Capacitor
 
Tungsten powder, anode body and electrolytic capacitor of capacitor
The present invention is tungsten powder, the anode body of a capacitor using the same, and to an electrolytic capacitor using the anode.
 
Size of the shape of the electronic devices such as mobile phones and personal computers, high speed, with the weight reduction, the capacitors used in these electronic devices, lightly smaller, larger capacity, the lower the ESR is sought there. 
 
As such a capacitor, an anode body of a capacitor made of a sintered body of valve metal powder such as that can be anodized tantalum was anodized to form a dielectric layer made of these metal oxides on the surface thereof is the electrolytic capacitor has been proposed. 
Tungsten is used as the valve metal, electrolytic capacitors with sintered tungsten powder to the anode body, the volume of the anode body using a tantalum powder of the same particle size, compared to the electrolytic capacitor is obtained in the same formation voltage , it is possible to obtain a large capacitance, leakage current (LC) was not subjected to practical use as a large electrolytic capacitor. To improve this, tungsten and other alloys capacitor is considered that have been but the leakage current with the metal is not sufficient for those improved somewhat.
 
An object of the present invention, a tungsten powder can be solved the problem of leakage current (LC) in the electrolytic capacitor of the sintered body of tungsten powder and anode as a valve metal, anode body of a capacitor using the same, and an anode The present invention is to provide an electrolytic capacitor using the body as an electrode.
 
The present inventors have found that the silicon content can be solved the above problems by a sintered body of tungsten powder part was tungsten silicide on the surface so that the specific range is used as the anode body , and the present invention  has been completed .
 
According to the tungsten powder of the present invention, and conventional tungsten powder, as compared to the tungsten alloy powder in a volume equivalent or more, it is possible that the LC characteristics per volume producing a good electrolytic capacitor.
 
Tungsten powder used in the present invention (raw tungsten powder) is commercially available. Smaller tungsten powder particle size, for example, tungsten trioxide powder was triturated under a hydrogen atmosphere or a tungstic acid or tungsten halide by using a reducing agent such as hydrogen or sodium, selecting the reducing conditions appropriate It can be obtained by.
 
Electrolytic Capacitors

Tungsten Carbide Button — Profile Optimization

Most of tungsten carbide button profiles are round and bullet-shaped. But in the process of using, conventional round tungsten carbide buttons are prone to be passivated and affects the efficiency of drilling; bullet-shaped tungsten carbide button has tapered crown and small ball radius, so it will be broken easily because of the deficiency in matrix strength in the large impacting power and the hard rock formation. Therefore, tungsten carbide button profile has a significant effect on the performance, which button profile optimization becomes a direction of research.

Based on spherical stamper effective rock breaking mechanism and constant bending stress theory, domestic researchers design blunt-resistant button. It combines the advantages of round buttons and bullet-shaped buttons, the crown consists of spherical shape cap and approximate cone; Wherein the body is subjected to the spherical cap spherical stamper rock breaking, approximate cone dovetail die broken rock, broken rock dominated the first spherical stamper, the stamper wedge after breaking rock, giving the formation of a common rock-breaking effect. In addition, by analyzing the stress distribution of the rock under the spherical die and wedge die proved more rock-breaking effects resistant carbide ball blunt teeth, drilling speed faster, and better impact toughness, not easy to be passivated.

There are experimental data shows that adopt blunt-resistant carbide button, the life and average drilling rate is 36% and 28% higher than bullet-shaped buttons. Another optimized button is composed of fore super-hard sphere and secondary super-hard sphere, the fore super-hard sphere produces shear after breaking rocks; when the drill impacts the rock again, the secondary super-hard sphere impacts on the shear and breaks the rocks repeatedly. This makes carbide button drill bit when drilling footage longer need to drill and drill bit protrusion treatment, but also to maintain a good rock fragmentation capability and self-sharpening performance. 

tungsten carbide button

 

Tungsten Carbide Button — Ultra-fine Crystallization and Gradient Optimization

Tungsten carbide button is a kind of rock drilling tools composed of hard phase WC and binder phase Co and has high hardness, high strength, high wear resistance and good impact toughness. Compared similar products with other materials, it has higher drilling speed, extends the service life 5 – 6 times, which not only saves time, improves the efficiency, but also reduces the frequency of changing buttons and manual labor.

With the increasing complexity of environmental conditions, drilling of drill performance requirements are also increasing, especially the button used for high-pressure drilling not only high hardness and wear resistance, but also need good toughness to prevent brittle fracture. The fine grain structure can effectively improve the performance of the alloy, studies have shown that ultrafine-grained and nano-structured carbide button binder phase content in the same case, when the WC grain size of less than 1μm, the hardness and strength can be greatly improved, and with the further reduction in WC grain size, the performance increase rate is more significant. Although nano grain is small in size, it has larger specific surface area, higher surface activity. So it has some excellent properties of nanostructures, such as lowering the sintering temperature required to increase the hardness, strength, wear resistance and impact toughness of mono button, life extension and so on, is one of the hotspots carbide materials currently.

Gradient carbide is a kind of multi-phase structured carbide that developed in the end of 1980s. The most outstanding characteristic is the gradient component and distribution. The preparation principle gradient structure of cemented carbide is obtained using low-carbon carbide alloy containing η phase by vacuum sintering, and treated to alter the distribution of Co binder phase of different parts of button distributed in different carburizing atmosphere Co content. As a result the organizational structure of tungsten carbide button shows gradient distribution of Co, the outer layer – Co-depleted layer, the intermediate layer – Co-rich layer, the inner layer – WC, Co, η three phases microstructure. The outer layer due to the high content of WC has good wear resistance; the intermediate layer has higher content of Co, so the toughness is better.

tungsten carbide button

 

 

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