Tungsten Oxide Inorganic Activation

Activation of tungsten oxide with inorganic substances can reduce the operating temperature of the sensor and improve its response to various gases. This is due to heterojunctions occurring when tungsten oxide and porous silicon carbon nanotube composites are bonded to each other. Such a heterostructure can effectively improve the response characteristics. Porous silicon and carbon nanotubes can provide more gas adsorption sites, thereby improving the response characteristics.

As a common material of porous silicon, tungsten oxide nanoparticles are often soaked onto porous silicon. Tungsten oxide is synthesized by a sol-gel process and deposited on porous silicon. The sensor thus synthesized responds well to nitrogen dioxide at room temperature and can detect its gas. Tungsten oxide nanoparticles are deposited on porous silicon, and their response characteristics are significantly improved due to the synthesis of heterojunctions on the bonding surface. At room temperature, the sensitivity to nitrogen dioxide can reach 3.37. Compared with pure porous silicon and tungsten oxide nanogas sensing layer at a detection temperature of 150°C, the sensitivity is significantly improved. A room temperature nitrogen dioxide sensor was prepared by sputtering a tungsten oxide containing an oxygen-deficient state on a porous silicon substrate, and a heterojunction phenomenon was also found, which greatly improved the response characteristics.

Porous silicon provides more gas adsorption sites for nitrogen dioxide, accelerating response and recovery. Due to the presence of more oxygen vacancies and p-n heterojunctions, the sensitivity to nitrogen dioxide is 6 at room temperature. The tungsten oxide sensor prepared in this manner also exhibits the response characteristics of a p-type semiconductor sensor at room temperature. Because of its large specific surface area, p-n heterojunction, and the presence of more oxygen vacancies.

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