Three Nitride Based Compound Semiconductor Laser Diode Object of The Invention

Objective three nitride based compound semiconductor laser diode of the present invention is to provide a III nitride semiconductor on a sapphire substrate, formed thereon and provided with a sufficiently high quality splitting surface to generate a higher laser the output of the laser element layer.

The above object of the three groups nitride based compound semiconductor laser diode of the invention can be manufactured by a laser diode group III nitride compound semiconductor to achieve (; 0 ≤ X ≤ 1; (the Al x Ga-X) yIn1-YN 0 ≤ Y ≤ 1) as defined in claim 1 having a double hetero junction structure is maintained between the layer having a larger band gap of the active layer.


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