The Sapphire Substrate of Aluminum Nitride Buffer Layer of The Prior Art

The sapphire substrate of aluminum nitride buffer layer such prior art reference discloses a description by which the p-type conductivity in the creation of manufacturing a group III nitride semiconductor laser is (AlxGayIn1 - x-yN, including the case of x = 0, Y = 0 and X = Y = 0), by exposure to electron beams. Such a semiconductor laser having formed thereon, in turn, covered with the group III nitride compound semiconductor (AlxGayIn1 - x-yN Sapphire pn heterojunction of the aluminum nitride substrate a buffer layer; including the case x = 0 Next, Y = 0 and x = Y = 0).

In Japanese Unexamined Patent Publication proposed laser diode (closed) Hei-4 - 242985 is a gallium nitride-based compound semiconductor ((the Al x Ga-X) yIn1-YN; 0 ≤ X ≤ 1, 0 ≤ Y ≤ 1), the impurity-doped active layer used.


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