Three Specific Embodiments Nitride Based Compound Semiconductor Laser Diode

The steps of forming a semiconductor laser element layer on the thus processed sapphire substrate will now be described with reference  is a section A-A is a section B-B. In other words, the direction is cut to produce section A-A is perpendicular to the direction is cut to produce section B-B.

The substrate was cooled to a temperature of about 600°C and trimethyl aluminum (TMA) and ammonia (NH3) were supplied to form an AlN layer 18 with a uniform thickness of about 50 nm on the substrate.Subsequently, only the supply of TMA was stopped and the substrate temperature was raised to 1040°C, followed by the supply of TMA, trimethyl gallium (TMG) and silane (SiH4) to have a Si-doped, n-type GaAlN layer 13 (n layer) formed on the AlN layer.


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