A Second Specific Embodiment of The Three Groups Nitride Based Compound Semiconductor Laser Diode

The sapphire substrate with the Group III nitride compound semiconductor laser element layer thus formed was dipped in a HCl base etchant that was held at 60°C. The substrate was then loaded in an ultrasonic cleaner for about 10 min so as to perform selective etching of the intermediate ZnO layer. As a result, the intermediate ZnO layer was removed to form a grid pattern of gaps between the sapphire substrate and the Si-doped, n-type GaAlN layer(n layer) which was the bottommost part of the semiconductor laser element layer.

In the next step, a sharp blade positioned right above each of the gaps was compressed onto the top surface of the SiO2 layer along line C-C, whereby the semiconductor laser element layer composed of three sublayers was cleaved. The resulting end faces of the cleavage would eventually serve as the mirror surfaces of a laser cavity.


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