Substrate Pre-Treatment And Initial Growth:Strategies Towards High-Quality III-Nitride Growth on Sapphire by Molecular Beam Epitaxy

Sapphire substrates annealed at 1200 °C in N2 : O2 (3 : 1) developed terrace-and-step morphology, ideal for III-nitride growth by molecular beam epitaxy. In situ treatment of sapphire substrates, using Ga deposition and desorption prior to growth, is shown to be negative for GaN growth. Nitridation transforms the sapphire substrate surface to a lateral structure similar to AlN (mismatch < 2.5%). The surface lattice parameters after nitridation did not depend on the substrate temperature. AlN nucleation layer growth conditions have been optimized for growth of GaN. Ideal Al / N flux ratio was found to be 0.6 for a 9 nm thick nucleation layer.

ZnO nanowires were fabricated on Au coated sapphire substrates by using a pulsed Nd:YAG laser with a ZnO target in furnace. ZnO nanowires have various sizes and shapes with a different substrate position inside a furnace. The length and the diameter of these ZnO nanowires were around 3–4 μm and 120–200 nm, respectively, confirmed by scanning electron microscopy (SEM). The diameter control of the nanowires was achieved by varying the position of substrates. The ultraviolet emission of nanowires from the near band-edge emission (NBE) was observed at room temperature. The formation mechanism and the effect of different position of substrates on the structural and optical properties of ZnO nanowires are discussed.


Tungsten Manufacturer & Supplier: Chinatungsten Online - http://www.chinatungsten.com
Tel.: 86 592 5129696; Fax: 86 592 5129797
Email: sales@chinatungsten.com
Tungsten & Molybdenum Information Bank: http://i.chinatungsten.com
Tungsten News & Tungsten Prices, 3G Version: http://3g.chinatungsten.com
Molybdenum News & Molybdenum Price: http://news.molybdenum.com.cn

• < Prev
• Next >