Optical Properties of Single‐Crystalline ZnO Film Smoothly Chemical‐Vapor Deposited on Intermediately Sputtered Thin ZnO Film on Sapphire

ZnO‐Br2‐O2, ZnCl2-O2, and ZnO‐H2‐H2O‐O2 chemical‐vapor‐deposition (CVD) systems are studied to obtain as‐grown optical waveguides of single‐crystalline ZnO on sapphire. The waveguide is made on a very thin sputter‐deposited epitaxial layer of ZnO on sapphire by using the ZnO‐H2‐H2O‐O2 isothermal CVD system. The minimum loss obtained for the TE0 mode propagating perpendicular to the c axis in a ZnO film is 0.7 dB/cm. This chemical‐vapor deposition of ZnO on a thin‐sputtered ZnO film gives a method for the fabrication of strip waveguides on sapphire due to the selective growth of the ZnO films on sputter‐deposited ZnO strips.

Chemically vapour deposited silicon on sapphire (SOS) films 0.25 μm thick were implanted with 28Si+ and recrystallized in solid phase by furnace annealing (FA) and IR rapid thermal annealing (RTA) in our laboratory. An improvement in crystalline quality can be obtained using both annealing procedures. After FA, it is hard to retain the intrinsic high resistivity value (104–105 Ω cm) observed in as-grown SOS films, so the improvement process cannot be put to practical use effectively. However, it is demonstrated that by properly adjusting the implantation and RTA conditions, significant improvements in both film quality and film autodoping can be accomplished. This work describes a modified double solid phase epitaxy process in which the intrinsic high resistivities of the as-grown SOS films are retained. The mechanism of suppression of Al autodoping is discussed.


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