Patterned Growth of Aligned ZnO Nanowire Arrays on Sapphire And GaN Layers

Patterned growth of vertically aligned ZnO nanowire arrays on the micrometer and nanometer scale on sapphire and GaN epilayers is reported. In order to control the position and distribution density of the ZnO nanowires, Au seeding nanodots are defined, as regular arrays, with the assistance of deposition shadow masks. Electron micrographs reveal that the wires are single crystals having wire axes along the hexagonal c-axes. The epitaxial growth of ZnO nanowires on sapphire and GaN films on Si substrates was further verified by cross sectional electron microscopy investigations. Compared to the sapphire case, the perfect epitaxial growth on a GaN film on a Si substrate is believed to be more suitable for potential electronic device applications of ZnO nanowire arrays.

An r.f. furnace and control equipment that are suitable for growing single crystals of refractory oxides, such as Al2O3, by the Czochralski technique is described and examples of sapphire and ruby boules grown using this equipment are shown. Thoria is employed throughout the furnace. Thoria has a lower heat capacity and a higher resistivity at the working temperature than any other refractory oxide. This enables iridium susceptor crucibles to be used at temperatures close to their melting point.


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