Effects of RF Coil Position on The Transport Processes During The Stages of Sapphire Czochralski Crystal Growth

The effect of the RF coil position during the stages of sapphire crystal growth process in an inductively heated Czochralski crystal growth furnace on the thermal and flow transport, the shape of the crystal–melt interface shape, and the power requirements is investigated numerically. The results show that although the maximum values of temperature and velocity decrease, the convexity of the crystal–melt interface increases as the crystal length grows. It is found that the least input power is required if the central position of the RF coil is maintained below the central position of the melt during the crystal growth process. Under such crystal growth conditions, the temperature gradients along the crystalline front are small.

Sapphire thin films, typically 10 μm thick, on undoped sapphire substrates using pulsed laser deposition from a Ti:sapphire single crystal target with a doping level of 0.1 wt.% Ti2O3. These thin films are shown to have very high crystal quality using ion beam channelling and X-ray diffraction techniques. The degree of titanium incorporation into the films is investigated using inductively coupled plasma mass spectrometry and particle induced X-ray emission. These techniques show that levels of up to 0.08 wt.% Ti2O3 are present in the deposited layers.


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