Modern Trends in Crystal Growth And New Applications of Sapphire

We provide an overview of the latest market trends and modern competing methods of sapphire crystal growth and the application of sapphire wafers as LED substrates. Almost all methods of high temperature growth from the melt are suitable for sapphire production, but each of these methods has its advantages and disadvantages depending on the application and required finished product form factor. Special attention is paid to the review of defects and imperfections that allow the engineering of new active devices based on sapphire.

An internally heated pressure vessel was used to study the decomposition reaction of GaN at temperatures above 900°C and the phase equilibria in the system Ga-N2. As a consequence of these studies we have undertaken the crystal growth of GaN free crystals and epitaxial layers on sapphire by a VLS process. We have succeeded in the synthesis of high quality epitaxial layers showing the terrace structure typical of LPE. As a function of the growth conditions both n and p type gallium nitride were obtained, the latter only in polycrystalline form.


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