Using of Numerical Simulation for Growing High-Quality Sapphire Crystals by The Kyropoulos Method

In the present work, an advanced numerical model is suggested to analyze heat transfer and flow pattern in sapphire crystal growth by the Kyropoulos technique. The new approach accounts for radiative heat exchange in the crystal and convection in the melt, and provides prediction of the crystallization front shape. The model allowed the analysis of several growth setup designs and selection of an optimal configuration. The numerical predictions performed with the CGSim software (www.semitech.us) agree well with available experimental data obtained in optimized crystal growth process reported for the first time.

Recent interest in monitoring systems requires very large optical windows that are transmitting over a wide spectral range. Some of the other requirements involve durability, high strength and robustness to withstand severe environments. Therefore, sapphire has been required for these applications. The Heat Exchanger Method (HEM)TM has been used to produce very large sapphire crystals primarily for optical applications. Crystals of 20 cm and 25 cm diameter have been produced in production for over 20 years. Presently, 34 cm diameter boules have been adopted in production, and 50 cm diameter sapphire growth is currently in development. Results of progress and characterization data of the boules will be presented.


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