Preparation of Elemental Tungsten Film
- Details
- Category: Tungsten Patents
- Published on Tuesday, 29 July 2014 08:53
The present invention provides a preparation of elemental tungsten film, which comprises the following process:
The substrate was heated to 100 ~ 150 ℃; then in a magnetron sputtering apparatus, a pure tungsten target in an argon gas atmosphere tungsten sputter deposited on the substrate film.
Elemental tungsten film nanomechanical properties prepared by the method of the present invention uniformly excellent, nano-hardness is more than three times the hardness of tungsten block, organized, distribution, good protective performance and fine grain tungsten film, with more grain boundaries, and well bonded to the substrate, and thus more conducive to get WS2 solid lubricant film further sulfide treatment, magnetron sputtering method according to the invention is simple, reliable technology, applicable to the preparation of a wide range of films.
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