Inquiring Tungsten Trioxide Infrared Reflection Property

we use sputtering target of high purity metal tungsten (99.9%), diameter of 100mm, the choice of ITO glass substrate and the monocrystalline silicon wafer as the distance, the target and the substrate is 60mm, AR sputtering gas and O₂, the background vacuum is -3000Pa, by a sputtering process parameters (pressure, composition, power, substrate temperature and time) corresponding to a reasonable choice of depositing an amorphous structure and polycrystalline tungsten trioxide thin film. Scattering spectroscopy means analyzing the composition and structure of the deposited thin films, infrared reflective properties of the thin film is measured by a spectrophotometer.

We prepare good cycle stability of polycrystalline tungsten trioxide thin film by using DC reactive sputtering process. It shows that with the co-injection of lithium ions and electrons, polycrystalline thin films of W6⁺is gradually reduced to W5⁺, infrared reflectance tests show that electrons become free carriers after electron injection film, such that shows the thin film have some infrared reflectance modulation performance.

We can obtain from the diagram, the deposition thin film shows only diffraction peaks without heating the substrate, the overall performance of the thin film substrate amorphous silicon are single crystal structure; when the substrate temperature reaches 350 ℃, the thin film shows a certain tendency to crystallize. Diffraction peaks of silicon substrate are still evident, the tungsten trioxide thin film can be considered as the alignment deposited under this condition grows extremely obvious, and the structure is not complete.

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