Rare Earth Doped Tungsten Oxide Nanostructured Films

Rare earth trivalent ions have rich 4f energy level configuration, and their fluorescence characteristics are greatly affected by the crystal field environment and the symmetry of the lattice. At present, many scholars use the small size effect of semiconductor nano materials (ZnO, TiO₂) and lattice sensitization to improve the optical properties of rare earth trivalent ions, which are widely used in biological fluorescent probes, optical devices and new luminescent materials.

Rare earth doped tungsten oxide nano film is a new kind of rare earth doped tungsten oxide nano structure thin film material, which combines the fluorescence characteristics of rare earth ions with the unique physical and chemical properties of tungsten oxide nano materials (rich phase structure, reversible, variable and so on). The process is as follows:

1.After ultrasonic cleaning in alcohol solution and deionized water for 15-30 minutes, the cut high temperature resistant substrates such as quartz or silicon are dried in an oven;

2.Weigh appropriate amount of tungsten powder and rare earth oxide respectively, and the quality fraction of rare earth oxide is 0.1% - 10.0%. After the mixture is even, it is laid in a tungsten boat;

3.Place the dried substrate on the tungsten boat, adjust the distance between the substrate and the tungsten boat by ceramic gasket to 2-50mm, and cover the quartz bell cover;

4.Turn on the mechanical pump to vacuumize the coating chamber. When the vacuum degree is 0.5-10pa, the inert gas (such as Ar gas, etc.) with a flow rate of 1-400sccm is introduced, and it is stable for 10-100min under the pressure of 10-400pa in the chamber;

5.Turn on the evaporation power, adjust the current to 230-280a within 5-30min, the temperature displayed by the infrared thermometer is 900-1500 ℃, and heat for 10-100min;

6.Reduce the heating current to 0A within 5-30min, turn off the evaporation power and cool to room temperature;

7.The samples were annealed in an oxygen atmosphere at 400-600 ℃ for 1-3 H. After the above process, rare earth doped tungsten oxide nanostructured films with good crystallinity were grown on high temperature resistant substrates (silicon, quartz, ceramic, etc.).

The preparation of rare earth doped tungsten oxide nanostructure thin films has the advantages of good crystallinity, complete and uniform nanostructure, and obvious fluorescence properties of rare earth ions. It has great potential application value in gas sensors, fluorescent probes, semiconductor sensing devices, etc.

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