Unbonded Pure Tungsten Carbide Target

The resistance of solid phase sintering between pure tungsten carbide powders is very high. It is difficult to obtain high density materials with densities of more than 99% without binder. At present, the research on pure tungsten carbide targets contains binder phases, such as TiC, TaC and Co.

In recent years, the spark plasma sintering (SPS) process has been the hottest research at home and abroad. Dense sintered bodies with relative density of about 98% can be obtained by using 1900 ℃, 30 MPa pressure and 5 min heat preservation. However, SPS sintering is limited by sample size and poor stability, which can not meet the requirements of large-scale and batch industrial production.

In order to manufacture unbonded pure tungsten carbide target, the following steps need to be fully mastered:

Step 1. Screening pure tungsten carbide powder to obtain pure tungsten carbide powder with uniform particle size;

Step 2. The pure tungsten carbide powder obtained in step 1 is evenly filled into the mould, hot pressed and sintered under vacuum conditions, and after cooling, the sintered blank is obtained by demoulding.

Step 3. The sintered billet obtained in step 2 is machined to obtain the unbonded pure tungsten carbide target which meets the requirements of size and surface quality. The target material has uniform grain size, average grain size less than 5 micron, densification over 99% and purity over 99.9%.

The preparation method of the unbonded pure tungsten carbide target has the advantages of simple preparation process and good forming effect, which is conducive to large-scale industrial production. Moreover, through the experiments in different temperature ranges, we can get a single pure WC target with phase structure, which improves the arc discharge phenomenon during sputtering process. The surface defect of the prepared film is less and the coating is more compact.

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