Tungsten Doped Vanadium Dioxide

Tungsten doping is a promising and effective way to reduce the phase transition temperature of vanadium didioxide. Doping can improve the electrical properties of vanadium dididioxide thin films, reduce the square resistance of the films, and improve the resistance temperature coefficient of the films. Common methods of doping include evaporation, ion implantation, sol-gel and magnetron sputtering.

Researchers have developed a method for preparing tungsten doped vanadium dioxide thin films, including the following steps:

(1) The substrate is cleaned, and the cleaned substrate is put into the high real chamber.

(2) Preparation of VO_x/W/VO_x composite film: The argon, metal vanadium target and tungsten metal target are placed in the vacuum chamber, and the metal vanadium target and tungsten target surface are pre sputtered by the sputtering power source of vanadium target and the tungsten target sputtering power, respectively. When the vanadium target is sputter target, the tungsten target is shielded with tungsten target and sputter tungsten targets. Vanadium target is covered with vanadium target baffle. The oxygen is passed into the vacuum chamber, the substrate baffle is opened, the tungsten target baffle is closed, the vanadium target sputtering power is opened, and the bottom dioxide vanadium dioxide (VO_x) film is deposited. After the deposition of the vanadium dioxide film at the bottom, the oxygen is closed, the sputtering power supply and the vanadium target baffle are closed, the tungsten target sputtering power and the tungsten target baffle are opened, and the middle layer tungsten (W) thin film is deposited. After the tungsten thin film is deposited, the tungsten target sputtering power and the tungsten target baffle are closed, the oxygen is rejoined, the vanadium target sputtering power and the vanadium target baffle are opened, and the upper layer of vanadium dioxide (VO_x) film is deposited.

(3) The deposited VO_x/W/VO_x composite films were annealed in situ. After the VO_x/W/VO_x composite film was deposited, the argon and oxygen were closed and the vacuum chamber was restored to high vacuum. The oxygen was added to the substrate and the substrate temperature was raised. After the interlayer oxygen diffusion between the VO_x/W/VO_x composite films is sufficient, the oxygen flowmeter is closed, and the vanadium doped vanadium dioxide film is cooled to room temperature in a high vacuum environment. The improved technology can overcome the traditional magnetron sputtering method to prepare the tungsten dioxide doped tungsten dioxide thin film in the process of double target co sputtering. The sputtering process can only prepare the doped thin film, and the sputtering process is stable and compatible with the micromechanical electronic system.

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