Tungsten Oxide Thin Film Magnetron Sputtering

Magnetron sputtering method is a common method of preparing tungsten oxide thin film. The principle of the magnetron sputtering method for the preparation of tungsten oxide thin film is that when the argon ions are accelerated by the cathode and bombard the cathode target surface, the surface atoms of the tungsten oxide target are sputtered. The tungsten oxide surface atoms then deposit on the substrate surface to form a thin film.

By changing the different materials of tungsten oxide target and control of different sputtering time, we can get different materials and different thickness of tungsten oxide thin film. The tungsten oxide thin film prepared by the magnetron sputtering method has the advantages of strong combination of coating layer and tungsten oxide, dense and uniform coating layer, and the like.

In the process of preparing tungsten oxide thin film by magnetron sputtering, the surface and internal microstructure of the tungsten oxide thin film can be optimized by adjusting sputtering process parameters. Thus, a tungsten oxide thin film having excellent electrochromic properties can be prepared. However, the surface of the tungsten oxide thin film prepared by the magnetron sputtering method has a peak-like structure, which is favorable for improving the material activity of the tungsten oxide film. By adjusting the working pressure in the magnetron sputtering process, the degree of looseness and the surface roughness of the tungsten oxide film can be changed. Tungsten oxide thin film can have more excellent topographic features.

When the microstructure of tungsten oxide thin film is looser, its coloring, fading faster. However, with the increase of looseness, the adhesion of the tungsten oxide film to the substrate will gradually decrease. However, when the looseness of the tungsten oxide thin film layer is too large, the film layer can easily fall off. Thus, shortening the cycle life of the tungsten oxide thin film.

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