Effect of The Variation of Film Thickness on The Structural And Optical Properties of ZnO Thin Films Deposited on Sapphire Substrate Using PLD

ZnO thin films were deposited on sapphire substrates with various thicknesses using a pulsed-laser deposition (PLD) technique in order to investigate the structural and optical properties of the films. The deposition conditions were optimized for UV emission property. The structural and optical properties were characterized with XRD and photoluminescence (PL). The increase in ZnO film thickness results in the improvement of the structural and optical properties. This enhancement could be due to the decrease of strain at the interface between ZnO film and sapphire substrate by the increase of film thickness.

Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O2 and N2 via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N2/O2 flow ratios induced growth twins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N2/O2 flow ratio of 10% was found to have a chemical nitrogen concentration of 1×1019 cm−3. However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects.


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