Two-Dimensional Large-Size Y Ba2Cu3O7 Films (30 × 10 cm2) on CeO2-Buffered Sapphire by A Coating Pyrolysis Process

Large-size, two-dimensional Y Ba2Cu3O7 (YBCO) films were successfully prepared by a chemical solution-sapphire substratebased coating pyrolysis (CP) process on 30 × 10 cm2 R-plane sapphire substrates with a vacuum-deposited CeO2 buffer layer. The CeO2 layer was very smooth and uniform with an average roughness (Ra) of 0.48 nm by atomic force microscopic observations and highly-oriented by large-area x-ray diffraction θ–2θ scans. The c-axis-oriented YBCO films were prepared by a CP process using a fluorine-free, metal acetylacetonate-based coating solution. A 30 × 10 cm2-rectangular c-axis-oriented YBCO film annealed in a large-diameter tube furnace demonstrated high inductive-Jc values, for which the distribution was fairly uniform, with an average 1.0 MA cm−2 at 77 K.

Epitaxial Naβ″-Al2O3 single crystal films have been grown into sapphire substrates. The kinetic measurements and calculation indicate that the β″-Al2O3 crystal is formed via chemical reactions between the gaseous alkali-species and sapphire substrate which are controlled by diffusion of oxygen species in the solid phase. The mechanism and crystallographic translations of film-growth are discussed.


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