Structural Properties of ZnO Grown on GaN ∕ Sapphire Templates The Transition from Nanorods to Thin Films

ZnO nanorods were synthesized on formula /sapphire substrates using a modified thermal-evaporation process. The as-synthesized Formula nanorods and thin films were characterized using scanning electron microscopy, micro-Raman, and X-ray diffraction techniques. The morphology of the Formula changes from nanorods to continuous thin films when the growth temperature increases to 800°C. Further increase in the growth temperature leads to a lower growth rate of Formula along the direction. Micro-photoluminescence measurements show ultraviolet band-edge emission peaks around Formula from both nanorods and thin films. Realization of such Formula structures may be useful for the fabrication of hybrid Formula optoelectronic devices.

Recent results suggests that Formula may be a p‐type transparent conductor, but thin film synthesis is difficult because of the complex Formula phase diagram. We report a robust method of making c‐axis oriented Formula thin films. Thin film precursors of formula were deposited on sapphire substrates by radio‐frequency sputtering and by pulsed‐laser deposition. Subsequent annealing in air at Formula in a closed crucible containing Formula and Formula powders yielded nearly phase‐pure, biaxially textured Formula . The film were p‐type and transparent with a gap of Formula .


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