Growth and Characterization of Nonpolar Zn1−xMgxO (0 ≤ x ≤ 0.113) Epitaxial Films: A Comparison of γ-LiAlO2 and Sapphire Substrates

γ-LiAlO2 and sapphire substrates have been employed to grow nonpolar Zn1−xMgxO films using metalorganic chemical vapor deposition. Zn1−xMgxO films with various Mg contents (0 ≤ x ≤ 0.113) are obtained by adjusting the partial pressure of the Mg metalorganic precursor in gas phase. Mg atoms incorporate within the films by means of substituting Zn. No segregated phase such as MgO or metal Mg is observed throughout the Zn1−xMgxO films. Structural characterization of the films indicates that γ-LiAlO2 is a superior substrate to sapphire  for the growth of the nonpolar Zn1−xMgxO films.

The epitaxial  Zn1−xMgxO films are successfully grown on the γ-LiAlO2 substrates with the epitaxial relationship of ZMO  LAO. On the other hand, the Zn1−xMgxO films with both  and  orientations are obtained on sapphire substrates although Zn1−xMgxO becomes dominant with increasing Mg content. In addition, room-temperature cathodoluminescence spectra of the epitaxial Zn1−xMgxO films show an obvious blue shift of the near-band-edge emission with increasing Mg content, demonstrating bandgap engineering in the epitaxial nonpolar Zn1−xMgxO films on the γ-LiAlO2 substrates.


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