Synthesis of Single Crystalline GaN Nanoribbons on Sapphire Substrates

In previous studies about the synthesis of GaN 1D nanostructures and Ga2O3 only appeared as one of the components of Ga source. Herein, we have successfully synthesized bulk-quantity GaN nanoribbons on sapphire substrates, from the direct reaction of sputtered Ga2O3 thin films with flowing ammonia. Neither metal catalysts nor templates were used in this process. The detailed characterization of the synthesized ribbon-like 1D nanostructures revealed that they were single crystalline hexagonal wurtzite GaN.

Single crystalline GaN nanoribbons were synthesized through nitriding Ga2O3 thin films deposited on sapphire substrates by radio frequency magnetron sputtering. The component and structure of nanoribbons were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The flat and smooth ribbon-like nanostructures are high quality single crystalline hexagonal wurtzite GaN. The thickness and width-to-thickness ratio of the grown GaN nanoribbons are in the range of 8–15 nm and ∼5–10, respectively.


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