Incandescent LED Industry Ushered Eliminated Countdown Opportunity

 
 

March 15 , China Lighting Association held in Beijing , " consumer advocate to lead a low-carbon green lighting live a healthy Health East " theme series of activities. The ceremonies , according to China LED Electric Appliance Association, Liu Sheng-ping said, according to " China to phase out incandescent roadmap ." October 1 this year , will ban the import and sale of 60 watts and above ordinary incandescent lighting .

China Lighting Association chairman Liu Sheng-ping said that at present about 13% of electricity for lighting the total electricity consumption of the whole society , if at all incandescent replaced with energy efficient lighting products , the annual saving of about 48 billion kwh .

Director Zhang marked LED Engineering Research Institute , said in 2014 the upstream chip concern, expects sales in 2014 mainland China LED driver chip industry will grow by about 50%, while product shipments should be maintained 80 percent growth rate.

Judging from the listed company , disclosed the end to Silan , 2014 Silan LED power driver IC will strive to achieve 10% -15 % market share in the next 3-5 years is expected to reach 30% market share ; Sanan Optoelectronics is the oldest , largest and best-quality full- color high brightness light-emitting diode (LED) epitaxy and chip manufacturers ; rectangular lighting LED lighting drive power IC R & D projects , technological innovation is Shenzhen 2013 Committee to be included in the Urban R & D projects funded form . According to company sources, the current IC power solutions designed by the company , part of the IC supply from other production house foundry , with the finished IC LED lighting power supplies are already in volume production.


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Sapphire Glass Panels Have A Chance to Become The Next Phone Screen Star

Apple (Apple) announced in November 2013 and Sapphire (Sapphire) Glass Manufacturers GTAT (GTAdvancedTechnologies) signed a multi-year  sapphire material sapphire material supply contracts , the market for Apple's next-generation iPhone, the rumors sapphire glass panel will be more rampant.

Currently smartphone screen material commonly used for Corning (Corning) of GorillaGlass, including various flagship models of mobile phones such as HTC One, Samsung Electronics (SamsungElectronics) of GalaxyS4, or Nokia (Nokia) are the Lumia1520 choose this as a protective glass screen . According to the press release noted that Corning , Corning GorillaGlass currently has 15 million units used in the device , and the numbers continued to grow .

Apple is promising screen material - sapphire, alumina (Al2O3) is composed , with anti -corrosion , high hardness and excellent scratch capability and other features. Mohs hardness of their ninth grade, second only to diamond , glass more scratch resistant than the average and less fragmentation.

According to the University of Alberta Feder (AlfredUniversity) Dean MatthewHall research , sapphire glass rupture toughness (fracturetoughness) Corning GorillaGlass about four times , and can reduce the chance of damage incurred due to falling .

So if the phone screen with sapphire glass panel , and when the phone is dropped , or other sharp objects like keys together bag, worry less about being scratched or cracked screen problem . Thus , Apple has started using sapphire glass covering the iPhone5, 5S after the shot and fingerprint identification key 5S , in order to protect the results.

However, because the density of the sapphire glass 3. 98g/cm3, greater than 2. 54g/cm3 GorillaGlass therefore in the same size , the weight will be heavier sapphire glass . Further , the higher refractive index of light of the sapphire glass , thus showing a screen brightness darker than GorillaGlass .

Plus Corning GorillaGlass addition to lower cost of raw materials , production technology has a very mature product, so analysts estimate the price sapphire glass may be about 10 times the price of Corning GorillaGlass . These are planned to sapphire glass screen as factors that have to be considered.

Therefore , TechRadar website speculated Apple and GTAT cooperation , mainly in order to reduce material costs. Develop both the sapphire laminate (SapphireLaminates), bonded by means of a thin sapphire GTAT touch panel and a glass substrate (sapphire-on-glass), in addition to allowing the screen thickness is less than 1mm, and most importantly, can significantly reduce the material cost of the sapphire glass .

In addition, Apple also prepaid GTAT approximately $ 578 million , allowed the purchase of nearly 1,000 Sapphire Dan Changjing furnace (sapphirecrystalfurnaces) planned to expand production capacity to achieve economies of scale objectives.

More protection for mobile devices scratch-resistant sapphire outstanding ability to bring users , but using a sapphire glass as a screen material , some issues remain to be resolved. Including in the face of strong light , use of cover to protect the lens when taking pictures , the photos will appear purple sapphire glass halo phenomenon ; well when used outdoors , the brightness of darker issues.

TechRadar website said that perhaps the brightness of darker issues in the future after the shift to thin sapphire laminates technology can be improved, but if the sapphire glass with bright colors , even the fullness of active organic light diodes (AMOLED) with the use, perhaps will be a great combination.



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OFweek Industry Research Center:4-inch LED Epitaxial Chips Will Become The New Darling of The Market

Recently , OFweek Industry Research Center released the " 2014 China LED epitaxial silicon market depth analysis and forecast sapphire substratereport " ( hereinafter referred to as the "Report" ) , the " Report " on China LED epitaxial chip market has been in-depth analysis . Among them, the " report" on the size of the trend of LED epitaxial wafers made ​​a detailed analysis and concluded that : in 2014 , China's LED epitaxial chips will gradually change to 2-inch -oriented pattern, 4 -inch LED epitaxial LED epitaxial silicon chips will become business focus.

To improve the MOCVD production , LED manufacturers in the traditional way to increase production to increase the reactor , such as the production of 2-inch epitaxial wafer 19 furnace switch from 55 furnaces, stoves , but the cost will increase accordingly . With the development of technology, wafer sizes from 2 inches to 6 inches conversion , production increased by 30 %, but at no extra cost , relying on the large increase OFweek semiconductor lighting network MOCVD wafer size to improve yields, has become the most wafer production provider of choice.

Chip companies at home and abroad , the sapphire substrate wafer company uses only 8-inch maximum size , the Korean and Japanese markets are 4 inch, 6 inch, 8 -inch sapphire substrate used in half of Taiwanese companies are two half -inch 4 inch , the mainland market, its 2-inch main.

" Report" that began in 2014 , including three safety optoelectronics , BDO Runda, HC SemiTek etc. have started leading chip layout 2 inch to 4 -inch epitaxial silicon , the mainland market demand for large size is also increasing . 2013 Sanan Optoelectronics completed 2 inch to 4 inch slices percentage was 30 % in 2014 is expected to reach more than 70% ; BDO Runda LED wafer production line project is finished, will be capable of 1.8 million four inches LED epitaxial wafers capacity ; HC SemiTek Zhangjiagang planning sheet chips are all four inches , the project will be put into its new blue and green chip production capacity of 1995KK / month , equivalent to 4 -inch epitaxial wafers 3 50 million / month .

The main driving 2-inch to 4 -inch enterprise epitaxial chips for two reasons : first, to reduce costs, in 2-inch and 4 -inch piece of sheet yield is under the same premise , 4 -inch piece costs relative to the cost of 2-inch pieces Price reduced by 20 % -30 % ; second , 4 -inch sapphire substrate price decline accelerated. OFweek Industry Research Center data show that the current 4 -inch sapphire substrate prices have dropped the price level of 2011 2-inch sapphire substrate.


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LED Lighting Has A Huge Potential Market in The Future,or The Golden Years

Chain information display next 3 to 5 years to mass adoption of LED lighting industry by a small margin of excess production LED lightingcapacity to tight balance , prices stabilize , LED will achieve a real sense of lighting revolution . According to LEDinside forecasts , in 2014 the global LED lighting products will be shipped with 68 % growth compared to 2013 . Among them, the growth rate in North America is expected to reach 72 percent , the Chinese mainland market LED lighting products consumption growth rate will reach 86%. Meanwhile, under the supportive policies , the domestic LED manufacturers will significantly accelerate progress in terms of industry consolidation and technological advances may open a new situation.

From the perspective of deterministic view, agencies generally agreed that the LED lighting industry in 2014 to determine the growth and penetration into the sharp rise in stages , so optimistic about the growth of the LED industry . For example, Guoxin Securities research report released consider : Incandescent world's major countries and regions in the lock-up plans to enter into force in 2014, the bulk phase and a decline in the cost of LED lighting , will trigger the outbreak of LED general lighting market. The LED lighting market is a billion -level market, is expected to make three to four years to maintain a large wave of opportunities for the industry cycle . LED industry has experienced over the past few years, production capacity oversupply , leading to rapid price decline in gross margin decline and serious adverse business conditions , the price dropped to a certain extent as well as incandescent ban policy into effect , stimulating rapid increase in demand for LED general , LED enterprises earnings are expected to enter the rapidly rising channel. From the recent A-share listed companies reported several LED 's annual results notice , the performance of the LED business in the fourth quarter of 2013, there are clear signs have begun to accelerate the release .


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High Prices Hinder The Promotion of LED Lighting Civilian

The data show that replace the traditional 60-watt incandescent bulb, the average retail price of 5-watt LED bulb has begun to decline in December last year, the average monthly price decline of 16%, while the lowest LED light bulb price reached $ 18.9 (U.S. $ 118.9 yuan). In replacing the traditional 40-watt incandescent bulbs 3 watt LED bulb categories, product manufacturers market the lowest price is $ 11.1 (about 69.97 yuan).

Insiders calculations, a 5-watt LED bulb price of 18.9 U.S. dollars (about 118.9 yuan), the average life of approximately 50,000 hours, if the eight districts of Guangzhou City by residential electricity price of 0.61 yuan / watt basis, use LED lights to maintain the 50,000 hours of lighting cost about 270 yuan. The 60-watt incandescent costs about $ 3, to an average life of only 1,500 hours, calculated according to the same conditions, the use of incandescent lamps cost about 1,932 yuan.


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Science And Technology:By 2015 More Than 80% Chip to Achieve Localization

Science and Technology released the " Plan" put forward in 2015 , more than 80 % of the chip to achieve localization , to achieve LED light bulb large-scale MOCVD equipment , localization of key raw materials , LED product cost reduction as low as 2011 's 1/5; LED lighting products in the general lighting market share reached 30% , the annual saving 100 billion degrees, the annual saving 35 million tons of standard coal ; industry reached 500 billion yuan . In order to ensure the realization of "planning" to set goals , to promote the application of the relevant departments will jointly issued guidance on the implementation of the semiconductor lighting applications central financial subsidy policy .

Insiders pointed out that the current LED chips accounted for nearly 60% of the estimated cost of lighting , light fixtures chip price will be able to drive costs down by nearly 50% ; plus packaging technology to enhance the popularity of low-cost and efficient drive circuit , lighting costs can be reduced now 30 % -40 %, so replace 40W incandescent LED bulb price drop to 20-30 million , street decline slightly smaller , but it can be reduced to a thousand or so mainstream price , to help accelerate the LED lighting in the civilian market penetration.


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GaN Substrate Will Lead The Development Trend of LED

Compared with conventional substrate material , gallium nitride has a large band gap , high breakdown voltage , large thermal conductivity , high saturated electron drift velocity , strong anti-radiation and good chemical stability  sapphire superior characteristics , is by far the theory lightning highest photoelectric conversion efficiency of the material system. GaN substrate relative to sapphire, silicon carbide substrate obvious performance advantages , but the biggest problem is that the price is too high.

Thick film substrate products : products are 10 to 50 microns in different sizes , commonly used is 20 to 30 microns. Dislocation density 107cm-3order of magnitude, depending on the technical parameters can be divided into two kinds i.e., semi-insulating and n -type doped . n -type doping is mainly used in LED and other optoelectronic devices, used primarily on semi-insulating power electronics, microwave devices.

Aspects of the self-supporting substrate of GaN : dislocation density 105cm -3 order of magnitude, depending on the technical parameters are divided into three types , i.e. n -type dopant , and the non -doped semi-insulating . n -type GaN , mainly used in LED, lasers ; semi-insulating then applied to the high-power microwave devices or high-current high- voltage switch. That undoped GaN high purity applications more widely on the detector , electron density material requirements as low as possible . Navier undoped GaN products , X-ray ( 002 ) peak half- width of 50 seconds ( 102 ) peak half- width of about 80 seconds , the electron mobility of the bulk material over 1500cmV-1s-1, the forefront in the international level. Navi is internationally one of the few capable of producing self-supporting unit sales of gallium nitride wafer .

HVPE grown GaN self- supporting substrate z

HVPE mainly metal gallium, hydrogen , ammonia, and hydrogen chloride reacts metallic gallium to form gallium chloride , gallium chloride gas after 200 ℃ becomes to the raw materials , and then on the substrate surface by reaction with ammonia becomes GaN . This generation HVPE method, the surface of the chemical saturation is very high, therefore, the growth rate is very fast , 50 to 100 times faster than the MOCVD growth rate , it is possible to grow one hour from 200 to 300 microns, in a short time the quality of this material becomes GaN , which is one of its characteristics.

The next five years , the price will drop GaN 10 to 20 times , 4 to 6 inches into the market

Heteroepitaxial on homoepitaxial GaN on sapphire substrate with the substrate , from a technical perspective, the hetero-epitaxial defect density GaN homoepitaxial higher than the 2 to 3 orders of magnitude. GaN has a conductive characteristics, the vertical structure of the chip can be made , so that the use of epitaxial wafer area increased 1.5 times higher than sapphire . After forming the vertical structure , the high current density GaN , a desired GaN substrate chip on the chip can be arrived ten sapphire substrate . United States and Japan NGK Sorra has begun to vigorously develop such chips, and made ​​an important breakthrough , to achieve the same brightness, the GaN substrate produced low energy consumption than traditional LED chips more than half.

With the decline in the amount of gallium nitride -scale production and prices , as well as the continuous development of LED epitaxial technology, the chip when the current density increased to 5 to 10 times, the use of GaN LED on sapphire obvious advantages than many . The next five years , prices for LED GaN substrate can drop 10 to 20 times, gallium nitride substrate in the unit price will be made ​​lumens significant advantage .


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Chinese LED Outdoor Advertising Market This Year Is Expected to Reach RMB15.5 One Hundred Million

Recently, an advertising agency in the Mainland market research revealed that in 2015, China Outdoor LED display advertising market will more than 2.7 billion yuan. Rapid expansion of LED outdoor advertising outdoor advertising will further squeeze the living space plane.

LED outdoor advertising due to the impact of its strong, with interactive features, in recent years in the outdoor advertising market share showed a double-digit growth. 2011 China LED outdoor electronic display advertising market reached 1.215 billion yuan, an increase of 35.5% over the previous year. The 2011 Chinese outdoor advertising totaled 51.5 billion yuan, an increase of 14 percent, far below the LED outdoor advertising growth. Insiders predict, LED outdoor advertising market this year is expected to reach 1.55 billion yuan, an increase of 27.6%.

LED outdoor display advertising market is dominated by the city of Phoenix, tulips, carved up the Champs-three companies, three companies occupy the whole continent of more than 70% market share, leaving only 26.9% for other small and medium sized counterparts, the fierce competition. Future competition will mainly focus on how to achieve the audience and the media through the use of high-tech interactive integration.


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Germany Developed A New Miniature LED Artificial Hearing Aid Technology

Recently, the German Institute for Microsystems Technology University of Freiburg , Fraunhofer Institute for Applied LED artificial hearing aidSolid State Physics Professor Ulrich led the research team developed a Lee LED mini implants to stimulate nerve cells in the cochlea help hearing-impaired people to restore and improve new technologies hearing .

Professor Ulrich led the research team 's commitment to " listen " project aims to study produced by Micro Linear LED light to stimulate alternative to traditional patterns of electrical stimulation to help hearing-impaired patients with hearing problems to solve new technologies to improve the model . This new technology model will effectively improve the user rhythm of language , music and background noise level of dialogue and comprehension . The results showed that the inner ear can be a good light-sensitive nerve cells react to light stimuli , and ENT Hospital, University of Göttingen cochlear implantation in mice experiments have been successful .

University of Freiburg Institute for Microsystems Technology , Fraunhofer Institute for applied physics researchers Solid jointly developed within the cochlea can be flexibly integrated micro- LED and probe sensing devices . Effective means by which to increase the number of channels to stimulate the outside sound , and to improve one to two orders of magnitude audio resolution . University of Freiburg , Institute of Microsystem Technology provides a flexible polymer engineering and biocompatible materials for the device . Fraunhofer Institute for Applied Solid State Physics , compared with the device provides a GaN micro- LED, the LED micro only 0.01 mm2 area of ​​only a few microns thickness . They face a common challenge for the future is how the polymer engineering materials and GaN LED integration.

It is understood that the basic research part of the " listen " research project by the German Federal Department of Research " Frontiers of Science Research Initiative " of € 300,000 funding support.


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NTT Eeveloped A Gallium Nitride-Based Semiconductor Thin Film can Be Peeled from The Sapphire Substrate Element Technology

Nippon Telegraph and Telephone (NTT) announced the development of a class can be potassium nitride semiconductor thin film LEDdevices such as the use of LED sapphire substrate from the stripped down easily work arts . This technique can be used at low cost gallium nitride-based semiconductor thin thickness of the film element 2 microns. Expected to expand the application range of the gallium nitride-based semiconductor thin film material , such as visible light through the ultraviolet absorbing only efficient solar cells, and thin thickness of 200 microns such as an LED . Further , by increasing the peelable film element area , is also expected on large-area thin-film element is formed of laminated material having a new function other membrane components and other purposes.

According NTT introduced , stacked on a sapphire substrate , a gallium nitride- based semiconductor thin film processing element for the manufacture of the device , the thickness of the substrate must reach about 0.5 mm . So , how in the world are studying the film from the substrate processing element will complete strip down and paste technique on other substrates. NTT Basic Research Laboratories physical properties of graphite with the same focus on a layered crystal structure of boron nitride conduct research to develop a MeTRe Act (Mec hanical Transfer using a Release layer). MeTRe law may remain intact after stripping the crystal plane , thus eliminating the previously proposed method for transferring necessary , after the peeling step to level the surface . Moreover, the use does not require large release MeTRe method and chemical equipment , is expected to significantly reduce the manufacturing time and manufacturing costs. Developed the following two points :

High Quality Laminated Layered Boron Nitride Films

Method MeTRe laminated on a substrate having high quality layered crystal structure boron nitride thin film , and then laminating the above element of high quality film . In such a configuration, the boron nitride thin film between the substrate and the grown thin film device with perforations plays the same role as the stamp can be easily peeled off and adhered to the other substrates . According to NTT introduced the film by finding the optimal conditions for the realization of a unified direction layered crystalline boron nitride thin films of high quality .

Layered Boron Nitride Films on High-Quality GaN Thin Film Element Layered

The technology was first developed in the layered crystal structure different boron nitride thin films laminated aluminum nitride or aluminum gallium nitride buffer layer , and then layered gallium nitride thin film element . Boron nitride films on layered laminated directly with GaN wurtzite structure , then, due to the different crystal structure , so it is very difficult . AlxGa1-xN , and the aluminum nitride substrate and the aluminum substrate has a good wettability , are widely used in the crystal structures of the laminated substrate . Such substances are used by layered boron nitride buffer layer between the film and the gallium nitride , regardless of whether the different crystal structures , can be stacked to form a high -quality thin-film devices .


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