Tungsten Chemical on Atomic Layer Deposition Method of Vapor Deposition

Tungsten chemical on atomic layer deposition method of vapor deposition

The present invention provides a chemical vapor deposition method for atomic layer deposition of tungsten. Specific steps are as follows:

A) Using a first reaction gas chemical vapor deposition process to form a first reaction gas atoms deposited layer;

B) The effect of residual gas finished first reaction gas extraction;

C) A second reaction gas containing tungsten chemical vapor deposition process to form a gas phase to the second atomic layer deposition comprising the first reaction gas tungsten atomic layer deposition reaction;

D) The role of the second reaction gas tungsten finished pumping the remaining gas;

E) Repeat the above step A to D at least one step of forming cycle;

F) In the cycle, the select part of the cycle repeated in step C and D at least once.Tungsten Chemical on Atomic Layer Deposition Method of Vapor Deposition
 

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