Group III Nitride-Based Compound Semiconductor Layer on A Sapphire Substrate

A laser diode made of a Group III nitride based compound semiconductor layers comprising a sapphire substrate; a multiple layer structure of a Group III nitride based compound semiconductors formed on said substrate, said multiple layer structure having a double heterojunction structure with an active layer arranged between layers  having a greater bandgap than the active layer, whereby the Group III nitride compositions of the multiple layer structure are defined by the general formula (AlxGa1-x)y In1-y N with 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1; wherein said sapphire substrate has a oriented plane which corresponds to face a of said substrate and which functions as a principal plane for crystal growth; said multiple layer structure is formed on said principal plane of said sapphire substrate either directly or in the presence of an intervening buffer layer; and mirror surfaces are formed by cleaving said multiple layer structure and said sapphire substrate in directions parallel to the direction which corresponds to the c axis of said sapphire substrate.

The improved laser diode is made of a gallium nitride base compound semiconductor ((AlxGa1-x)yIn1-yN; 0</=x</=1; 0</=y</=1) with a double heterojunction structure having the active layer held between layers having a greater band gap, the laser diode comprises mirror surfaces formed by cleaving said multi-layered coating and said sapphire substrate in directions parallel to &Lang&0001&Rang& (c axis) of said sapphire substrate. Further, in the improved process, only the intermediate zinc oxide (ZnO) layer is removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottommost sub-layer of said semiconductor laser element layer; and said semiconductor laser element layer is cleaved with the aid of said gaps 20, with the resulting planes of cleavage being used as the mirror surfaces of the laser cavity.


Tungsten Manufacturer & Supplier: Chinatungsten Online - http://www.chinatungsten.com
Tel.: 86 592 5129696; Fax: 86 592 5129797
Email: sales@chinatungsten.com
Tungsten & Molybdenum Information Bank: http://i.chinatungsten.com
Tungsten News & Tungsten Prices, 3G Version: http://3g.chinatungsten.com
Molybdenum News & Molybdenum Price: http://news.molybdenum.com.cn



 

• < Prev
• Next >