Tungsten Film Properties Controlling Method

The deposition of tungsten films using chemical vapor deposition (CVD) techniques is an integral part of many semiconductor fabrication processes. Tungsten films may be used as low resistivity electrical connections in the form of horizontal interconnects, vias between adjacent metal layers, and contacts between a first metal layer and the devices on the silicon substrate. In a conventional tungsten deposition process, the wafer is heated to the process temperature in a vacuum chamber, and then a very thin portion of tungsten film, which serves as a seed or nucleation layer, is deposited. Thereafter, the remainder of the tungsten film (the bulk layer) is deposited on the nucleation layer. Conventionally, the tungsten bulk layer is formed by the reduction of tungsten hexafluoride (WF6) with hydrogen (H2) on the growing tungsten layer.

In certain embodiments, a method includes providing a substrate to a chamber. The substrate includes a field region and a feature recessed from the field region, and the feature includes sidewalls and a bottom. A tungsten nucleation layer is deposited on the sidewalls and the bottom of the feature. The feature is filled with tungsten via a first chemical vapor deposition process using a tungsten precursor. During the first chemical vapor deposition process, the substrate temperature is maintained at about 330 to 450° C. and the partial pressure of the tungsten precursor in the chamber is less than about 1 Torr.


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