It is to be noted that an advantage of the present invention is that the formation of tungsten layer 308 and tungsten-silicide adhesion layer 306 can be done "in-situ". That is, the tungsten layer 308 can be deposited in the same chamber as the tungsten-silicide adhesion layer without the need to break vacuum. Tungsten layer 308 and tungsten-silicide layer 306 may also be formed, if desired, in a tungsten cluster tool having a WSix deposition chamber and a tungsten deposition chamber.

 

It is to be appreciated that the use of tungsten-silicide adhesion layer eliminates the need for a tungsten nucleation layer. That is, if a TiN adhesion layer were utilized instead of a WSix adhesion layer, the formation of tungsten layer 308 would require the formation of a nucleation layer first. (It is to be appreciated that silane (SiH4) used to form the WSix adhesion layer 306 is already supplied to the deposition system because it was required to form the nucleation layer for the tungsten layer.) Thus, in the process of the present invention a tungsten-silicide deposition step is added while a tungsten nucleation step is eliminated.

 

 

Tungsten Manufacturer & Supplier: Chinatungsten Online - http://www.chinatungsten.com
Tel.: 86 592 5129696; Fax: 86 592 5129797
Email: sales@chinatungsten.com
Tungsten News & Tungsten Prices, 3G Version: http://3g.chinatungsten.com
Tungsten News & Tungsten Prices, WML Version: http://m.chinatungsten.com