Ti Doping Tungsten Oxide Electrochromic Film

Some experts have prepared the Ti doping tungsten oxide electrochromic film by the following methods in order to study the influence of different oxygen partial pressures on the structural properties of Ti doped WO3 thin films.

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Ti doped WO3 film was deposited by pulsed DC power source reactive sputtering method on a FTO transparent conductive glass (sheet resistance of -20Ω) using the tungsten-titanium alloy (containing 6% of titanium) as a target. Before sputtering, the ultimate pressure is pumped to below 4.5*10-4Pa, high purity argon (99.9% Ar) is used as the working gas, high purity oxygen (99.9% O2) is used as the reaction gas, the substrate temperature is 350°C, and the working pressure is fixed at 1.7Pa, WO3: Ti films with different oxygen partial pressure were deposited by changing the flow rate of O2 into 7sccm, 9sccm, 13sccm, and 15sccm. Because the working pressure is fixed, when the O2 flow rate increases, the Ar partial pressure decreases, the amount of Ar+ bombarded on the surface of the target per unit time decreases, and the sputtered W atoms decrease, resulting in a decrease in deposition rate.

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