On this basis, they proposed the catalytic surface atmospheric pressure chemical vapor deposition method with gold as growth substrate,which achieved the high quality, single uniform and large-area films preparation of millimeter-sized WS2 single crystals. The study found that the catalytic activity of gold and low solubility of tungsten in gold ensure the growth of uniform monolayer high quality WS2 crystals. In the meanwhile, the electrochemical bubbling method may be applied in realization of WS2 high quality transfer without gold substrate damaging. The single WS2 obtained by this method has high crystalline quality, showing optical and electrical properties compared with the material prepared by mechanical exfoliation of the proposed.

 

In addition, the research proposed non-destructive method of roll-to-roll and electrochemical bubbling combination for transferring, which achieve a low-cost continuous transfer of large-area single WS2 film to flexible transparent substrate, which also realize the preparation of large-area flexible transparent WS2 monolayer’s thin films transistors array and the electrical properties is still not attenuated after being bent hundreds of times .