Tungsten-Based Materials Applied in French West Tokamak Project

French West Tokamak Project Image-1

Recently, a team of scientists at the US Department of Energy's Princeton Plasma Physics Laboratory won the US Department of Energy Science Award, which resulted in the development of two new X-ray diagnostic instruments for the French West Tokamak project. This instrument can be used to diagnose the possible risk of melting of the first wall material of the plasma in the ITER artificial solar project.

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Spherical Tungsten Carbide Powder Property and Application

spherical tungsten carbide powders image

Spherical tungsten carbide powder has the microstructure of fine equiaxed dendrites, its morphology of dense homogeneous spherical WC particles. It maintains a stable chemical property, good fluxibility and hardness, and outstanding wear or abrasion resistance. 

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Spherical Tungsten Powder Production Methods - 1/2

spherical tungsten powder image

Spherical tungsten powder’s particle size for producing cemented carbide has been changing smaller of the past 20 years. As the fine-grained cemented carbide tungsten powder can significantly improve the hardness and strength of the alloy. 

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Spherical Tungsten Powder Production Methods - 2/2

spherical tungsten powders image

Many spherical tungsten powder manufacture methods have been researched and developed by  advanced technologies to comply with the more strictly usage requirements in different industries. Below are another two tungsten-hydrogen halide reduction methods.

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0.7nm Tungsten Selenide (WSe2) Been Developed

tungsten selenide diode structure image

0.7nm tungsten diselenide (WSe2) diode has been successfully developed by Dr. Lin’s team from integrated Synchrotron Radiation Research Center of Taiwan Hanyu energy technology company, it’s meaningful of our humans have finally broken the semiconductor 3nm process limit, surpassing Moore's Law and directly entering the sub-nano era (<1 nm). It also reveals that the era of compound semiconductors will eventually replace silicon semiconductors.

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