Effect of CVD Tungsten Tube Process Parameters on Deposition Rate

CVD tungsten tube process parameters:

Reaction gas: keep the inlet amount and ratio of WF6 and H2 unchanged

Deposition temperature: 500 ℃, 600 ℃, 700 ℃, 800 ℃ (hold heating way the same)

Deposition matrix: copper with the same diameter

Reduction reaction: WF₆ + H₂ → W + 6HF (125Kj/mol)

Effect of CVD tungsten tube process parameters on the deposition rate:

There are some aspects can be seen from the analysis of CVD tungsten tube test results:

CVD tungsten tubes’ deposition rate rises quickly with the deposition temperature increases.

When the deposition temperature is lower than 500 ℃, the speed of reduction reaction is very slow, and the growth rate of depositing tungsten tube film is also very low.

When the deposition temperature is controlled at 500 ℃ -700 ℃ around, the increase of the CVD tungsten tube deposition rate is obvious.

When the deposition temperature is about 700 ℃ -800 ℃, the acceleration of deposition rate of CVD tungsten tube is more slower.

If the deposition temperature is over 800 ℃, the organizational structure of the deposited layer of tungsten tube is so loose that there is no practical value, therefore, the deposition temperature should be controlled at 500 ℃ -700 ℃ around.

 

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