Tungsten Disulfide Film Prepared by Radio Frequency Sputtering

Radio frequency sputtering is a common and simple method for preparing tungsten disulfide film that has good compact and coating binding force. And in the preparation process, tungsten disulfide target is discharged continuously by radio frequency excitation in inert gas.

Radio frequency sputtering is a method using positive ions in RF discharge plasma to bombard the target and make atoms sputter from the target to deposit on the surface of the substrate. And then the film can be successfully prepared.

This method uses an AC sputtering system in which AC power is used instead of DC power. As the frequency of the commonly used AC power supply is in the radio frequency band (5 ~ 30 MHz), so this method is called radio frequency sputtering. Radio frequency sputtering is widely used in film preparation that it can be used to deposit films of almost any solid material.

Tungsten disulfide film can be prepared by radio frequency sputtering. The preparation process is as follows:

Tungsten disulfide target is formed by compacting and sintering tungsten disulfide powder with 99.99% purity. Then the target is discharged continuously by radio frequency excitation in argon. The background vacuum is 4x10^-4Pa, the working pressure is 1 Pa, the sputtering power is 30 W, and the deposition time is 1 h.

Tungsten sulfide film can be obtained directly by radio frequency sputtering. The prepared film are compact, firmly adhered to the substrate and has high construction rate. This simple method has high technological reproducibility.

Though have the advantages as above, such a method also has limitations:

1. The chemical composition of tungsten disulfide films is unstable. The ratio of sulfur and tungsten in the film varies with the working pressure and sputtering power.

2. The crystallinity rate of tungsten disulfide film is low, and the prepared film is generally amorphous.

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