Tungsten Disulfide Film Prepared by Reactive Magnetron Sputtering

Reactive magnetron sputtering is a common and easy method for preparing tungsten disulfide film with high melting point. The preparation process involves the reactive deposition of atoms sputtered from tungsten targets and sulfur ions that produced by hydrogen sulfide (H2S).

Magnetron sputtering is a method to ionize argon by applying several hundred K DC voltage between cathode (cylindrical target or planar target) and anode (wall of film plating chamber) so as to produce abnormal glow discharge. Reactive magnetron sputtering is a type of magnetron sputtering. Metal, alloy, or semiconductor material is usually used as target cathode in the reactive magnetron sputtering. The target cathode is reacted with gas particles to form a film on the substrate surface.

Tungsten disulfide film can be successfully prepared on quartz substrates by reactive magnetron sputtering, which involves the reactive deposition of atoms sputtered from tungsten targets and sulfur ions produced by hydrogen sulfide (H2S). The specific process is as follows:

A 99.95% tungsten target is taken and placed 10 cm apart from the substrate. The background vacuum is 4 x 10^-4 Pa. H2S is mixed with argon at a working pressure between 1 Pa and 6 Pa and a sputtering power of 100 W. Then tungsten disulfide film with basal orientation can be successfully prepared.

Reactive magnetron sputtering is suitable for preparing tungsten disulfide film with high melting point. It has high technological reproducibility. And tungsten disulfide film prepared by this method usually has high purity and good coating binding force. However, such a method also has some shortcomings:

1. High cost.

2. The deposition efficiency is low and can’t be applied in large-scale preparation of film.

3. The process parameters such as the mixture ration of H2S and argon are difficult to control, so the uniformity of the film will be uncertain in the preparation process.

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