Oxygen - deficient Tungsten Oxide Catalytic Properties

Oxygen-deficient tungsten oxide, as a new material, offers superior performance advantages over conventional tungsten oxide. The determination of its catalytic properties, the main use of methyl orange method to determine the structural characteristics of oxygen-deficient tungsten oxide.

Tungsten oxide itself has a negative charge, methylene blue these cationic dye molecules with strong adsorption, but does not adsorb methyl orange neutral dye molecules. When testing photocatalytic materials for oxygen-deficient tungsten oxide materials, it is necessary to exclude the material's absorbability to the dye. Therefore, in testing the catalytic performance of oxygen-deficient tungsten oxide, a methyl orange solution was used. At 463 nm corresponds to the azo chromophore in methyl orange. The peak intensity at 463 nm decreased gradually, demonstrating that the azo group of methyl orange is breaking.

The degradation rate in visible light at 550 nm-780 nm is obviously higher than that in dark field. It is presumed that the photocatalytic efficiency is higher and the concentration is lower in dark environment. However, the main effect is photocatalytic reaction. To further understand whether the benzene ring is cleaved under the irradiation of light with a wavelength greater than 550 nm, 0.5 ml of methyl orange solution degraded for 0 minute and 180 minutes respectively is dried and characterized by a micro-infrared absorption spectrometer.

In the absorption spectrum of methyl orange dye degrading at 0 and 180 minutes when irradiated with light of wavelength longer than 550 nm, 1632, 1530 and 1425 are the absorption peaks of water and methyl, respectively. Visible at 0 minutes, the absorption peak at the benzene ring at 1607, 1367 disappeared after 180 minutes of degradation. The peak at 1425 appears. It can be speculated that the methyl orange in the benzene ring is indeed cracked. The range of light absorption by a semiconductor depends on the forbidden band width and band structure of the semiconductor.

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