Production Method of Rotary Target Using Tungsten-Molybdenum Alloy
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- Category: Tungsten Information
- Published on Wednesday, 25 July 2018 18:49
- Written by yuntao
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Thin-film-transistor (TFT) film has the advantages of high responsivity, high brightness and high contrast. It is one of the basic materials in many industries. Therefore, it is widely used in the fields of solar cells, liquid crystal displays and plasma displays. In recent years, along with the rapid development of high-end displays, tungsten Molybdenum alloy rotary targets have become an important material for the preparation of TFT films.
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High-purity Ammonium Paratungstate Preparation Process
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- Category: Tungsten Information
- Published on Wednesday, 25 July 2018 18:42
- Written by yuntao
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Ammonium paratungstate hydrate is an intermediate for the production of tungsten metal, tungsten-containing catalysts, tungsten-based hard materials (such as tungsten carbide) or sputtering targets. The preparation is carried out mainly by digesting or melting a slag containing tungsten concentrate or tungsten with acid or base, followed by purification, and the purification stage includes a precipitation process and a liquid-liquid extraction. The purified solution is usually concentrated by evaporation to finally crystallize the ammonium paratungstate hydrate.
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Preparing Tungsten-Zirconium Alloy with Arc Melting Process
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- Category: Tungsten Information
- Published on Wednesday, 25 July 2018 18:24
- Written by yuntao
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Tungsten is a very important non-ferrous metal. It has the properties of high density and high hardness. It is commonly used in counterweight materials, shielding materials and military materials. Tungsten-zirconium alloy has a broad application prospect in the military field due to its strong resistance to corrosion.
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Preparation Method of Tungsten-Based Tungsten Trioxide Nanofilm
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- Category: Tungsten Information
- Published on Wednesday, 25 July 2018 18:33
- Written by yuntao
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In recent years, research on tungsten trioxide (WO3) nanofilm has attracted more and more attention. WO3 is an n-type semiconductor material with a narrow band gap (2.4-2.8eV), is capable of responding to visible light, and has similar characteristics to TiO2 photocatalyst, namely stable, non-toxic, photo-resistant, low-cost and low-priced. The potential of the belt is high and the photo-generated holes are highly oxidizing.
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Preparation of Tungsten Disulfide Transverse Heterojunction
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- Category: Tungsten Information
- Published on Wednesday, 25 July 2018 18:09
- Written by yuntao
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Heterojunctions have become an essential element of the modern semiconductor industry, and they play an important role in high-speed electronic devices and optoelectronic devices. Two-dimensional layered materials, including graphene and transition metal disulfide, can serve as a constituent unit of a heterostructure due to their unique electrical and optical properties.
Read more: Preparation of Tungsten Disulfide Transverse Heterojunction