The synthesis and characterization of molybdenum carbide catalysts on different carbon supports were investigated by researchers from Henan Polytechnic University. Molybdenum carbide was prepared by carburization of ammonium molybdate on cellulose, g-C₃N₄, MWCNTs, and sodium lignosulfonate without using any gaseous carbon source. In addition, the formation of molybdenum carbide was investigated in depth by in situ characterization using a simultaneous thermal analyzer-quadrupole mass spectrometry system.

Low molybdenum (Mo) bioavailability in acidic soils hinders N assimilation by vegetables, and providing available Mo in acidic soils is a challenge to reduce nitrate accumulation in vegetables. A study conducted by the Institute of Guangdong Academy of Agricultural Sciences investigated three methods of molybdenum application: biochar-based molybdenum fertilizer (Mo-biochar), seed dressing, and basal application to improve Mo bioavailability and N assimilation in cabbage (Brassica parachinensis) in acidic soils.

A study conducted mainly by researchers at Nanjing University reports the uniform nucleation (>99%) of bilayer molybdenum disulfide (MoS₂) on c-plane sapphire. Two-dimensional transition-metal dichalcogenides (TMDs) are of interest to researchers in the field of electronics. It is believed that the combination of good electrostatic control, smaller bandgap, and higher mobility than single-layer TMDs has the potential to improve the power-delay products of transistors. However, despite the progress made in the growth of single-layer TMDs, multilayer controlled epitaxial growth remains a challenge.

Recently, researchers have proposed an analytical band calculation (ABC) model to study the band structure of monolayer molybdenum disulfide. For two-dimensional (2D) materials, a semiconductor layer is about the thickness of an atomic layer. 2D materials are gaining attention for their potential applications in future transistor manufacturing processes. 2020 International Roadmap for Devices and Systems (IRDS) predicts that by 2028, 2D materials will be the optimal choice for channel material technologies and CMOS 2D device applications.