As a basic material in the semiconductor industry and photovoltaic field, the quality of monocrystalline silicon directly determines the performance and efficiency of downstream products.

Tungsten crucible plays an important role in the process of crystal growth, such as bearing molten raw materials, high-temperature heat transfer and environmental isolation, and its reasonable design directly affects the quality, yield and stability of the whole process. Therefore, it is of great significance to carry out the optimal design of the crucible according to the special working conditions of the crystal growth furnace.

In the actual use process, tungsten crucibles often face the risk of crack formation, which not only affects its service life, but also directly affects the stability of the process and product quality.

Tungsten crucible is widely used in high-temperature vacuum processes such as crystal growth, rare metal smelting and vacuum evaporation due to its high temperature resistance, thermal shock resistance and strong chemical inertness.