Ultraviolet Electroluminescence from N-ZnO:Ga/p-ZnO:N Homojunction Device on Sapphire Substrate with P-Type ZnO:N Layer Formed by Annealing in N2O Plasma Ambient

ZnO homojunction light emitting device (LED) with n-ZnO:Ga/p-ZnO:N structure was fabricated on sapphire substrate by metal organic chemical vapor deposition. The reproducible p-type ZnO:N layer with hole concentration of 1.29 × 1017 cm⁻³ was formed with NH3 as N doping source followed by thermal annealing in N2O plasma protective ambient. The device exhibited desirable rectifying behavior. Distinct electroluminescence emission centered at 3.2 eV and 2.4 eV were detected from this device under forward bias at room temperature. The intensive ultraviolet emission was comparable to the visible emission in the electroluminescence spectrum, which represent remarkable progress in the performance of ZnO homojunction LED.

Epitaxial layers of ZnO have been deposited by chemical vapor transport on single‐crystal sapphire substrates. The ZnO layers have been deposited up to thicknesses of 100μ. X‐ray analysis showed that the c axis of the ZnO could be made to lie parallel to the‐oriented sapphire substrate. Resistivities were generally from 1 to 10 Ω‐cm but could be significantly increased by diffusion of lithium or sodium.


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