High Breakdown Voltage Undoped AlGaN-GaN Power HEMT on Sapphire Substrate And its Demonstration for DC-DC Converter Application

Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ·cm2, which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.

SiN-passivated AlGaN/GaN heterojunction FETs (HJFETs) were fabricated on a thinned sapphire substrate. A 16 mm-wide HJFET on a 50 /spl mu/m-thick sapphire exhibited 22.6 W (1.4 W/mm) CW power, 41.9% PAE, and 9.4 dB linear gain at 26 V drain bias. Also, a 32 mm-wide device, measured under pulsed operation, demonstrated 113 W (3.5 W/mm) pulsed power at 40 V drain bias. To our best knowledge, 113 W total power is the highest achieved for GaN on any substrate, establishing the validity of the GaN-on-thinned-sapphire technology.


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