Epitaxial Growth of ZnO Thin Films on R-Plane Sapphire Substrate by Radio Frequency Magnetron Sputtering

ZnO thin films were deposited on a R-plane sapphire substrate. The effects of the thermal energy and the kinetic energy of the sputtered species on the growth of ZnO thin films were investigated. By varying the substrate temperature, chamber pressure, and radio frequency power, the structure of ZnO thin films was transformed from polycrystalline to epitaxial on R-plane sapphire substrates. High quality ZnO epitaxial thin films were grown at the condition of 400 °C, 250 W, and 5 mTorr. According to reflection high energy electron diffraction and reflection electron microscopy observations, there were no double diffraction distortion and any other patterns. Its surface roughness observed by atomic force microscopy was about 27 nm.

A 1.5 GHz range low insertion loss surface acoustic wave (SAW) filter has been developed using a ZnO/sapphire substrate and IIDT-type electrodes with two external reflectors. This filter had an insertion loss of 1.3 dB, stop-band attenuation of greater than 30 dB and matching impedance of 50 Ω pure resistivity without external matching networks. This filter has the smallest insertion loss of all transverse-type GHz-range SAW filters reported previously and it is suitable for use as a RF-stage filter for future 1.5 GHz range Japanese digital cellular systems.


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