Homoepitaxial Growth of AlN on Nitrided Sapphire by LPE Method Using Ga–Al Binary Solution

A novel liquid phase epitaxy method was proposed for growing an AlN layer using Ga–Al binary flux under normal pressure. In this method, nitrogen gas was injected into the flux. Then a nitrided sapphire substrate was used as a template to achieve homoepitaxial growth. Advantages of using a nitrided sapphire substrate were demonstrated; the optimum flux composition was investigated. We grew 1-µm-thick c-axis oriented AlN layer for 5 h at 1573 K. The full width at half maximum values of X-ray rocking curves for AlN and were, respectively, 50 and 590 arcsec. Moreover, the surface morphology and interfacial structure were observed using a scanning electron microscope, laser microscope, and high-resolution transmission electron microscope.

By applying conventional epitaxial crystal growth techniques to this VLS process, it is possible to gain precise orientation control during nanowire growth. The technique, vapor-liquid-solid epitaxy (VLSE), is particularly powerful in the controlled synthesis of high-quality nanowire arrays and single-wire devices. For example, ZnO prefers to grow along the direction and readily forms highly oriented arrays when epitaxially grown on an a-plane sapphire substrate . A similar level of growth control can be achieved for GaN10 and Si/Ge systems. It is possible to use this VLSE technique for the growth of nanowire arrays with tight control over size (diameter < 20 nm) and uniformity (< ±10%). In addition, we have explored different types of nanowire heterostructures, including coaxial15 and longitudinal variations. Semiconductor heterostructures enable the confinement of electrons and holes, the guiding of light, and the modulation of both phonon transport and carrier mobility. This size monodispersity and heterostructure control is crucial for many proposed applications for these nanowire arrays, including light emission and field-effect transistors.


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