Controlled Growth of Gallium Nitride Single-Crystal Nanowires Using A Chemical Vapor Deposition Method

Chemical vapor deposition (CVD) using gold nanoparticles as the catalyst to grow high-quality single-crystal gallium nitride nanowires was developed. This method enables control over several important aspects of the growth, including control of the nanowire diameter by using monodispersed gold clusters, control of the nanowire location via e-beam patterning of the catalyst sites, and control of the nanowire orientation via epitaxial growth ona-plane sapphire substrates. Our work opens up new ways to use GaN nanowires as nanobuilding blocks.

The diffusion of oxygen in sapphire was accelerated by heating in a 28 GHz microwave furnace as compared with heating in a conventional furnace. Tracer diffusion experiments were conducted using 18O. Single crystal sapphire wafers with a (1 0 1 2) rhombohedral planar orientation were used as the substrate. Concentration depth profiling was done by proton activation analysis using a 5 MeV Van de Graaff accelerator. The diffusion of 18O was greatly enhanced by microwave heating as compared with conventional heating in the 1500–1800°C range. The apparent activation energy for 18O bulk diffusion was determined to be 390 kJ mol-1 with microwave heating and 650 kJ mol-1 with conventional heating.


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