A tungsten gate electrode and method of fabricating the same are provided. In one aspect, a method of fabricating a circuit device in an opening in an insulating film on a substrate is provided. The method includes depositing a film of amorphous silicon and amorphous tungsten in the opening, and thereafter depositing a film of polycrystalline tungsten on the film and annealing the substrate to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film. The tungsten silicide film and the polycrystalline tungsten film may be planarized to the insulating film. The method enables the seamless fabrication of an adhesion layer and a tungsten conductor structure in a single chamber and without resort to titanium.
In accordance with one aspect of the present invention, a method of fabricating a circuit device in an opening in an insulating film on a substrate is provided. The method includes forming a film of amorphous silicon and amorphous tungsten in the opening. A film of polycrystalline tungsten is formed on the film of amorphous silicon and amorphous tungsten and the substrate is annealed to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film.
In accordance with another aspect of the present invention, a method of fabricating a tungsten conductor structure in an opening in an oxide film on a substrate is provided that includes depositing a film of amorphous silicon and amorphous tungsten in the opening, and thereafter depositing a film of polycrystalline tungsten on the film and annealing the substrate to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film. The tungsten silicide film and the polycrystalline tungsten film are planarized substantially to the insulating film.
In accordance with another aspect of the present invention, a circuit device is provided that includes a substrate, an insulating film on the substrate that has an opening and a tungsten silicide film on the insulating film that has a sufficient amount of unbonded silicon to bond the tungsten silicide film to the insulating film. A tungsten film is positioned on the tungsten silicide film.
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