CsxWO3 Nanoparticles Applied for Infrared Mini Light-emitting Diode

CsxWO3 nanoparticles, which are also known as cesium doped tungsten oxide nanoparticles or cesium tungsten bronze nanoparticles, have good near infrared absorption ability and visible light transmission properties for applying to the infrared mini light-emitting diode to reduce the intensity of over irradiated near infrared.

CsxWO3 nanoparticles applied for infrared mini light-emitting diode image

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CsxWO3 nanoparticles applied for infrared mini light-emitting diode picture

Recently, near infrared LEDs have been used in small electronic devices due to the trend of manufacturing compact systems. The intensity of near infrared optical device needs to be moderated if the chip emits too much power. In tradition, color pigments are used as additives in the encapsulant of LEDs to reduce the intensity of over irradiated near infrared, a strategy which results in unaesthetic appearance. While applying very few amount of CsxWO3 nanoparticles into the encapsulation materials of near infrared optical device can decrease near infrared intensity while still maintain high visible light transmittance without losing aesthetic touch of those devices such as LED transmitters. The addition of only 0.0021 wt% CsxWO3/PMA dispersion in epoxy encapsulant can drop 15.5% near infrared (860 nm) intensity but barely reduce visible light (only 3.2% at 450 nm). So, it is believed that the excellent performance of CsxWO3 nanoparticles can be suitable for maintaining the moderate luminescence intensity of small optoelectronic devices like NIR mini- or micro- light-emitting diodes.

 

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