Hexagonal ZnO nanorods have been selectively synthesized via vapor–solid process without gold catalysis on a pre-coated ZnO buffer layer. The presence of nanometer-sized pits or hills on the surface of ZnO buffer layer provides nucleation sites to which the zinc vapor is transferred and condensed. Followed by immediate oxidation the ZnO nanorods were grown on the buffer layer. Contrarily, the SEM images hardly show growth of irregular ZnO nanometer-sized products on the bare sapphire substrate. Besides a strong ultra-violet emission at 3.26 eV observed at room temperature, the coupling strength of the radiative transition to LO-phonon polarization field was deduced in use of the Huang–Rhys factor from low temperature photoluminescence spectra to show that single crystalline ZnO nanorods.

It shows that aligned zinc oxide (ZnO) nanowires growth on sapphire substrates is epitaxial and demonstrates the crystallographic relation between the two using grazing incidence synchrotron x-ray diffraction (XRD). The in-plane lattice match between the sapphire and the nanowires was directly probed by using XRD at grazing angles of incidence, where the lattice match between the (0001) plane of the sapphire and the (11-20) plane of the ZnO were observed simultaneously. It will also be shown that gold acts as a catalyst to initiate ZnO nanowire growth, but it does not interfere with the epitaxial mechanism between the nanowires and the sapphire substrate.


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Dan Changjing Advanced Sapphire Furnace (ASF ™) is the production of high quality , the best platform for large-size sapphire substrate , sapphire material to meet the highest levels of the market , such as high Brightness LED and other special industrial markets. After 40 years of authentication based on the sapphire crystal growth process and production technology , ASF and low risk , highly automated production environment can operate consistently uniform sapphire ingot material to improve productivity and quality and reduce costs . Furnace production by the ASF sapphire material growth at low heat gradient from low-stress environment , sustainable production of high-quality materials, the most suitable for high-brightness HB LED and other special industrial needs . ASF provides the production of high yields of low-risk method of sapphire , and provide a high return for your investment .

Product main advantages : a rapid growth along the A -axis , a bottom-up manner conducive to the growth of the production of high-quality, low stress sapphire material ; 2 shortest production cycle of less than 18 days ( 100 kg sapphire ingot * ) ; 3 a year. each furnace production capacity exceeds 100,000 TIE;. 4 scalable architecture to protect investment ; 5 based on 40 years after proof sapphire material production ; 6 crucible geometric shape and flexible design process size to meet the requirements of our customers ; 7 no Moving Parts low-cost, low-risk operation and growth of highly automated manufacturing process ; 8 seed simple process.


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In Paris around 1890, A. V. L. Verneuil developed a flame fusion process to produce ruby and sapphire crystal. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, which was used with little alteration for 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire crystal by the Verneuil process. In the U.S., under government contract during World War II, Linde Air Products Co. implemented the Verneuil process for making jewel bearings for precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher quality crystals for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG).

The Saphikon company, owned now by Saint-Gobain, evolved from this effort. Stepanov independently developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid later established crystal systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire crystal hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near-net-shape sapphire domes was demonstrated by both the EFG and HEM methods in the 1980s but neither method became commercial. Today, domes in the U.S. are made by scooping sapphire boules with diamond-impregnated cutting tools. Commercial markets for sapphire crystal, especially in the semiconductor industry, are healthy and growing at the dawn of the 21st century.


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June 28 morning, in the national scientific and technological progress advanced cities of Zhenjiang born a one hundred kilograms sapphire crystal , this innovation is the rapid growth of China's LED industry provides a high-quality materials , and means of sapphire crystal growth, substrate manufacturing market long-term dependence on imports passive situation is being broken , to improve the LED industry chain plays a vital role in the history of technological innovation and a milestone. Provincial Science and Technology Department deputy director Wang Qin , vice mayor Feng Shi Chao Zhenjiang City , Zhenjiang Suzhou was party secretary and other relevant leaders , experts and a number of media to witness this moment, it is a body transparent , into a cylindrical shape sapphire crystal , weighing 101.35 kg , is currently produced by human technology largest and heaviest sapphire crystal.

According to on-site technical personnel, over one hundred kilograms Fengyun sapphire crystal with the United States , Switzerland and other foreign experts jointly developed , it is the use of " in-situ growth , in-situ annealing " unique growth process technology for superior quality sapphire single crystal , the crystal growth process solves the inconsistent quality , small size , and many other problems. Successful trial production of the first furnace for future large-scale production and upgrade to a larger size gems possible.

Professor Bai Fengzhou said: Fengyun sapphire crystal far as I can see and understand the size of the country 's largest , heaviest weight sapphire single crystal . Growth process and heat exchange equipment unique in the country , and within a short time large-size sapphire crystal growth hit the ground running , won the first battle . In the process of the domestic large-size sapphire crystal growth in seize the high ground, with the big breakthrough.

Look forward to the next trip, moving steadily, at every step , so that the crystal growth process is stable and reliable equipment operation carefully , the product has a high rate . In particular, firmly grasp the crystal quality, scientific management , advanced technology , and personnel for the fight for more breakthroughs .

In recent years, LED industry is developing rapidly worldwide , and its products are widely used in the field of lighting and blue lasers , especially applied to the liquid crystal display , the market is expanding rapidly , almost 100% of notebook computers, more than 50% of LCD TVs are application . In this huge LED industry chain, sapphire crystal growth, substrate manufacturing at the forefront of LED industry chain is the largest investment , the highest technical barriers, the largest value-added sectors , the manufacturing process each of them requires a high superb production technology and management support , reliance on technology and equipment is very strong, because of this, China's demand for high brightness blue LED epitaxial wafers , etc. are almost entirely dependent on imports . The birth of large-size sapphire crystals , can be said to be a major breakthrough in solving the LED industry chain " bottleneck" .


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