Tungsten Silicide Application
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- Category: Tungsten Information
- Published on Monday, 13 July 2015 18:12
- Written by xiaoshan
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On one hand, tungsten silicide is used in microelectronics as a contact material, with resistively 60-80μΩcm and it is often used as a shunt over polysilicom lines to increase their conductivity and increase signal speed. On the other hand, tungsten silicide also finds use in microelectromechanical systems and for oxidation-resistant coatings. Besides, tungsten silicide layer can replace tungsten films which are made by chemical vapor deposition. What’s more tungsten silicide is also used as a barrier layer between silicon and other metals such as tungsten.
Tungsten silicide layers can be prepared by chemical vapor deposition, besides films of tungsten silicade can be plasma-etched using for example nitrogen trifluoride. There is producing process as follow:
1.Using monosilane or dichlorosilane with tungsten hexafluoride as source gases.
2.The deposited film is non-stoichiometric and require annealing to convert to more conductive stoichiometric form.
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Tungsten Disilicide
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- Category: Tungsten Information
- Published on Monday, 13 July 2015 18:09
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Tungsten disilicide also known as tungsten silicide, and it is an inorganic compound, a silicide of tungsten. It is an electrically conductive ceramic material. The physical properties of tungsten disilicide are as following: chemical formula:WSi2, molar mass:240.011g/mol, density:9.3g/cm3,melting point:2160℃, which is insoluble in water, but soluble in fluorine aqua regia, what’s more, it has good anti-oxidation. Besides, there are tungsten disilicaide chermistry which is it can react violently with substances such as strong acids, fluorine, oxidizers and interhalogens.
On one hand it is used in microelectronics as a contact material, with resistively 60-80μΩcm. On the other hand it is often used as a shunt over polysilicom lines to increase their conductivity and increase signal speed.
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Tungsten Silicide Producing
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- Category: Tungsten Information
- Published on Monday, 13 July 2015 18:05
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Producing tungsten silicide there has two ways: one is through the reaction of tungsten powder and silicon powder in an argon gas into the vacuum extraction, and the other is making tungsten and silica powder to sintered at 1200 ℃ in an argon atmosphere by calcinate.
There are introduce using tungsten powder and silicon powder in a vacuum process to produce tungsten the producing processes which are as follows:
1. The tungsten powder and silicon powder ingredient at a molar ratio of 1: 2, titanium powder and graphite powder ingredient at a molar ratio of 1: 1, and then were mixed evenly by separately.
2. The silicon powder and tungsten powder mixed powder packed in crucibles middle, the titanium powder and graphite powder packed in crucibles middle where the tungsten-silicon mixed powder be. Finally, put titanium-ink mixed powder on top of all the mixed powder at the middle of crucibles. In the middle of crucibles where has mixed powder of tungsten-silicon and titanium-ink mixed powder and the weight ratio of (0.8 to 1.2): 1.
3. Replace the crucible into sealed reactor, evacuated, then filled with argon, and then stare the reaction of mixture powered.
4. After the material is cooled removal the materials, and then apart the titanium carbide and tungsten disilicide separated, respectively, to obtain crushed tungsten disilicide and titanium carbide powder.
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Tungsten Trisilicide
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- Category: Tungsten Information
- Published on Monday, 13 July 2015 18:07
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Tungsten and silicon at 1900 ℃ sintered in an argon gas to form tungsten disilicide and tungsten trisilicide.
Tungsten trisilicide was known as W5Si3, is in a tetragonal crystal, its physical properties are as follows: chemical formula: W5Si3, molecular weight: 1003.77, melting point: 2320 ℃, decomposition at about 1450 ℃, in air at 500 ~ 700 ℃ will oxidized, dissolved in HNO3 + HF mixed acid.
There are some system numbers about tungsten trisilicide which are as follows: CAS registry number: 12039-95-1, EINECS System number: 234-912-7.
Tungsten trisilicide can produce by tungsten and silicon reaction, the chemical equation of producing process is 5W + 3Si → W5Si3, which the producing process is as follows:
1. In accordance the molar ratio of the tungsten and silicon is 5:3 and then mixing them with evenly.
2. pass over argon to reactor, and then at the 1400 ℃ to sintered tungsten trisilicide in an argon atmosphere.
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Tungsten silicide
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- Category: Tungsten Information
- Published on Monday, 13 July 2015 18:03
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Tungsten silicide is a black and gray (blue gray) tetragonal crystals are stable at room temperature and atmospheric pressure, its physical properties are as follows: chemical formula: WSi2, molecular weight: 240.01, melting point:> 900 ℃, tungsten silicide insoluble in water and aqua regia, can be dissolved in a mixture of nitric acid and hydrofluoric acid. Tungsten silicide is usually used for making anti-oxidation coating layer and the resistance wire poultice. It has a certain irritation, if you do not accidentally come into contact the tungsten silicide may cause inflammation of skin and eyes, although it is usually not hazardous to water, but the absence of relevant government departments licensing, the material can not be discharged into the surrounding environment. For storage of silicon oxide, it should be sealed and placed in a room temperature, cool and dry place.
Tungsten silicide related system numbering: CAS registry number: 12039-88-2, MDL number: MFCD00049704, EINECS number: 234-909-0, PubChem ID: 24864814.
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