General Silicon Carbide Information

Silicon carbide is composed of tetrahedra of carbon and silicon atomswith strong bonds in the crystal lattice. This produces a very hard andstrong material. Silicon carbide is not attacked by any acids oralkalis or molten salts up to 800°C. In air, SiC forms a protectivesilicon oxide coating at 1200°C and is able to be used up to 1600°C.The high thermal conductivity coupled with low thermal expansion andhigh strength give this material exceptional thermal shock resistantqualities.

Silicon carbide ceramics with little or no grain boundaryimpurities maintain their strength to very high temperatures,approaching 1600°C with no strength loss. Chemical purity, resistanceto chemical attack at temperature, and strength retention at hightemperatures has made this material very popular as wafer tray supportsand paddles in semiconductor furnaces. The electrical conduction of thematerial has lead to its use in resistance heating elements forelectric furnaces, and as a key component in thermistors (temperaturevariable resistors) and in varistors (voltage variable resistors).

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