Sputtered Tungsten Trioxide Applied for Photoelectrode

Sputtered tungsten trioxide, more specifically, sputtered WO3 film, may be applied as a photoelectrode to obtain high solar-to-hydrogen efficiency. Some experts have prepared tungsten oxide film with a dense, compact morphology at a temperature lower than 250 °C by reactive sputtering from tungsten targets in an argon/oxygen ambient in the context of photoelectrochemical water-splitting.

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The film shows columnar growth. Amorphous and highly polycrystalline film can be produced depending on the deposition conditions. Polycrystalline phases appear only at higher temperatures and under certain sputter target conditions. Large crystallites proved beneficial to photoelectrochemical performance. A maximum photocurrent of 2.7 mA/cm2 was observed in 0.33M H3PO4 under AM 1.5 global illumination. Doping of sputtered tungsten oxide films with nitrogen results in a red-shifted absorption edge, but so far not in increased photocurrents. The maximum photocurrent of a nitrogen-doped sample was measured at 2.3 mA/cm2. A multi-junction photoanode based on the best available sputtered  WO3 film and an amorphous silicon photovoltaic device is projected to operate at 2.2% solar-to-hydrogen efficiency.

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