Tungsten Oxide Resistance Memory

Tungsten oxide resistance memory is a semiconductor device which can achieve storage by reversible change of resistance value of tungsten oxide material under electric field.

The present preparation method of tungsten oxide resistance memory includes the following steps: forming an insulating dielectric layer; oxidizing part of tungsten at the top of the through hole to form a tungsten oxide resistance memory cell, which will become thicker after tungsten oxidation, so that the top of the formed tungsten oxide resistance memory cell is higher than the surface of the insulating dielectric layer, and finally forming a top metal layer on the insulating dielectric layer and tungsten oxide resistance memory cell.

In order to eliminate the leakage path between the top metal layer and the bottom metal layer of the tungsten oxide resistance memory cell, and thus improve the erase operation window and reliability of the tungsten oxide resistance memory, some enterprises adopt the following schemes:

Step 1: A sacrificial layer of nitrogen and silicon compounds is formed on the top surface and side of the tungsten oxide resistance memory cell by deposition process.

Step 2: Re-etching the sacrificial layer of nitrogen and silicon compounds, removing the sacrificial layer of nitrogen and silicon compounds on the top surface of the tungsten oxide resistance storage unit, and forming a side wall barrier layer composed of the sacrificial layer of nitrogen and silicon compounds on the side of the tungsten oxide resistance storage unit.

Step 3: Form a top metal layer, the top metal layer contacts the top surface of the tungsten oxide resistance storage cell, and the side wall barrier layer isolates the top metal layer from the metal layer located at the bottom of the tungsten oxide resistance storage cell.

By forming a side wall barrier layer on the side of the tungsten oxide resistance memory cell, the top metal layer can be isolated from the metal layer at the bottom of the tungsten oxide resistance memory cell, thus eliminating the leakage path between the top metal layer and the bottom metal layer of the tungsten oxide resistance memory cell, and finally improving the erase operation window and reliability of the tungsten oxide resistance memory cell.

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